IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation:
15 mW (typical) operating
1.5 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V V
dd
(62WV6416dALL)
2.3V--3.6V V
dd
(65WV6416dBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and automotive temperature support
• 2CS Option Available
• Lead-free available
OCTOBER 2009
are high-speed, 1M bit static RAMs organized as 64K words
by 16 bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
DESCRIPTION
The
ISSI
IS62/65WV6416DALL and IS62/65WV6416DBLL
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62/65WV6416DALL and IS62/65WV6416DBLL are
packaged in the JEDEC standard 48-pin mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
1
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
PIN CONFIGURATIONS
48-Pin mini BGA (6mm x 8mm)
(Package Code B)
1 2 3 4 5 6
48-Pin mini BGA (6mm x 8mm)
2 CS Option (Package Code B2)
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
V
DD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
NC
NC
A14
A12
A9
A1
A4
A6
A7
NC
A15
A13
A10
A2
CSI
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
V
DD
GND
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
V
DD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
NC
NC
A14
A12
A9
A1
A4
A6
A7
NC
A15
A13
A10
A2
CS1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
CS2
I/O
0
I/O
2
V
DD
GND
I/O
6
I/O
7
NC
PIN DESCRIPTIONS
A0-A15
I/O0-I/O15
CS1, CS2
OE
WE
LB
UB
NC
V
dd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
44-Pin mini TSOP (Type II)
(Package Code T)
A4
A3
A2
A1
A0
CS1
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
WE
X
X
X
H
H
H
H
H
L
L
L
CS1
H
X
X
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
d
Out
High-Z
High-Z
d
Out
d
Out
d
Out
d
in
High-Z
d
in
High-Z
d
in
d
in
V
DD
Current
i
sB
1
, i
sB
2
i
sB
1
, i
sB
2
i
sB
1
, i
sB
2
i
CC
i
CC
i
CC
Write
i
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
V
dd
t
stg
P
t
Parameter
Terminal Voltage with Respect to GND
V
dd
Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
dd
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
in
C
i/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
in
= 0V
V
Out
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C,
f = 1 MHz, V
dd
= 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
3
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
AC TEST CONDITIONS
Unit
Unit
(2.3V-3.6V)
(3.3V + 5%)
Input Pulse Level
0.4V to V
dd
- 0.3V
0.4V to V
dd
- 0.3V
Input Rise and Fall Times
1V/ ns
1V/ ns
Input and Output Timing
VDD /2
VDD + 0.05
and Reference Level (V
Ref
) 2
Output Load
R1 (
Ω
)
R2 (
Ω
)
V
tm
(V)
See Figures 1 and 2
317
351
3.3V
See Figures 1 and 2
317
351
3.3V
Parameter
Unit
(1.65V-2.2V)
0.4V to V
dd
- 0.3V
1V/ ns
0.9V
See Figures 1 and 2
13500
10800
1.8V
AC TEST LOADS
R1
VTM
OUTPUT
30 pF
Including
jig and
scope
R2
R1
VTM
OUTPUT
5 pF
Including
jig and
scope
R2
Figure 1.
Figure 2.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
IS62WV6416DALL/DBLL
IS65WV6416DALL/DBLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 5%
Symbol
V
OH
V
OL
V
iH
V
iL
i
Li
i
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., i
OH
=
–1 mA
V
dd
=
Min., i
OL
=
2.1 mA
GND ≤
V
in
≤
V
dd
GND ≤
V
Out
≤
V
dd
,
Outputs Disabled
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
iL
(min.) = –0.3V DC; V
iL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
iH
(max.) = V
dd
+
0.3V dC; V
iH
(max.) = V
dd
+
2.0V AC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.3V-3.6V
Symbol
V
OH
V
OL
V
iH
V
iL
i
Li
i
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., i
OH
=
–1.0 mA
V
dd
=
Min., i
OL
=
2.1 mA
GND ≤
V
in
≤
V
dd
GND ≤
V
Out
≤
V
dd
,
Outputs Disabled
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
iL
(min.) = –0.3V DC; V
iL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
iH
(max.) = V
dd
+
0.3V dC; V
iH
(max.) = V
dd
+
2.0V AC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 1.65V-2.2V
Symbol
V
OH
V
OL
V
iH
V
iL
(1)
i
Li
i
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
V
DD
i
OH
=
-0.1 mA
1.65-2.2V
i
OL
=
0.1 mA
1.65-2.2V
1.65-2.2V
1.65-2.2V
GND ≤
V
in
≤
V
dd
GND ≤
V
Out
≤
V
dd
,
Outputs Disabled
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
dd
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
iL
(min.) = –0.3V DC; V
iL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
iH
(max.) = V
dd
+
0.3V dC; V
iH
(max.) = V
dd
+
2.0V AC (pulse width < 10 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/09
5
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