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KV31S1-154-1

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 25V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size122KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

KV31S1-154-1 Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 25V, Silicon, Hyperabrupt

KV31S1-154-1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20.83%
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor200
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationHYPERABRUPT
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