Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 25V, Silicon, Hyperabrupt
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH RELIABILITY |
| Minimum breakdown voltage | 25 V |
| Configuration | PARALLEL CONNECTED, 4 ELEMENTS |
| Diode Capacitance Tolerance | 20.83% |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Number of components | 4 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Maximum power dissipation | 0.25 W |
| Certification status | Not Qualified |
| minimum quality factor | 200 |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Varactor Diode Classification | HYPERABRUPT |
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