EEWORLDEEWORLDEEWORLD

Part Number

Search

KSV2114A

Description
Variable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size33KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

KSV2114A Overview

Variable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

KSV2114A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCobham Semiconductor Solutions
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.6
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor100
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
GLASS - LEADED
GENERAL PURPOSE ABRUPT VARACTOR DIODES
KSV2101 - KSV2115
PART
NUMBER
KSV2101
KSV2102
KSV2103
KSV2104
KSV2105
KSV2106
KSV2107
KSV2108
KSV2109
KSV2110
KSV2111
KSV2112
KSV2113
KSV2114
KSV2115
CAPACITANCE
@ 4 Vdc
f = 1 MHz (pF)
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
MIN QUALITY FACTOR
Q @ 4 Vdc
f = 50 MHz
450
450
400
400
400
350
350
300
200
150
150
150
150
100
100
CAPACITANCE RATIO
f = 1 MHz C•2V / C•30V
MIN
MAX
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.5
3.2
2.6
3.3
2.6
3.3
2.6
3.3
2.6
3.3
Package Style
DC Power Dissipation
Reverse Breakdown Voltage
Max Reverse Current (I
R
)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance:
@ Ta = 25°C
@ 10µA
@ Ta = 25° C
Standard Device
Suffix A
DO-7
400 mW
30 V Min
0.1 µA @ 25 Vdc
-65 to + 175° C
-65 to + 200° C
±10%
±5%
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1496  2432  1732  2202  2772  31  49  35  45  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号