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CD13003F

Description
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size405KB,4 Pages
ManufacturerRectron
Environmental Compliance  
Download Datasheet Parametric View All

CD13003F Overview

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

CD13003F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeSIP
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)24
JEDEC-95 codeTO-126
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
CD13003
TO126 PLASTIC PACKAGE
NON SILICON POWER TRANSISTOR
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T
a
=25 ºC
Derate Above 25ºC
Power Dissipation @ T
c
=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
45
360
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R
th (j-c)
R
th (j-a)
T
L
2.77
89
275
ºC/W
ºC/W
ºC
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CBO
I
C
=1mA, I
E
=0
Collector Base Voltage
*V
CEO(sus)
I
C
=10mA, I
B
=0
Collector Emitter (sus) Voltage
Collector Cut Off Current
Emitter Cut Off Current
*Pulse Test: PW=300m Duty Cycle=2%
m
s,
I
CBO
I
EBO
V
CB
=600V
,
I
E
=0
V
CB
=600V
,
I
E
=0, T
c
=100ºC
V
EB
=9V, I
C
=0
MIN
600
400
TYP
MAX
UNIT
V
V
mA
mA
mA
1.0
5.0
1.0
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