K8A6415ET(B)B
NOR FLASH MEMORY
64Mb B-die SLC NOR Specification
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AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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* Samsung Electronics reserves the right to change products or specification without notice.
1
Revision 1.1
September, 2006
K8A6415ET(B)B
NOR FLASH MEMORY
Document Title
64M Bit (4M x16) Sync Burst , Multi Bank NOR Flash Memory
Revision History
Revision No. History
0.0
0.5
Initial Issue
Change Device ID from 2272H(Top Boot Block), 2273H(Bottom Boot
Block) to 2252H(Top Boot Block), 2253H(Bottom Boot Block)
Bottom boot table is added
tAVDH is changed to 2ns at all frequency
Specification is finalized
"Asynchronous mode may not support read following four sequential
invalid read condition within 200ns." is added
Draft Date
Remark
November 9, 2005 Advance
December 15, 2005 Preliminary
0.6
0.7
1.0
1.1
January 20, 2006
February 07,2006
August 28, 2006
September 08, 2006
Preliminary
Preliminary
2
Revision 1.1
September, 2006
K8A6415ET(B)B
FEATURES
•
Single Voltage, 1.7V to 1.95V for Read and Write operations
•
Organization
- 4,194,304 x 16 bit ( Word Mode Only)
•
Read While Program/Erase Operation
•
Multiple Bank Architecture
- 16 Banks (4Mb Partition)
•
OTP Block : Extra 256Byte block
•
Read Access Time (@ C
L
=30pF)
- Asynchronous Random Access Time :
90ns (54MHz) / 80ns (66MHz)
- Synchronous Random Access Time :
88.5ns (54MHz) / 70ns (66MHz)
- Burst Access Time :
14.5ns (54MHz) / 11ns (66MHz)
•
Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with No-wrap & Wrap
•
Block Architecture
- Eight 4Kword blocks and one hundreds twenty seven
32Kword blocks
- Bank 0 contains eight 4 Kword blocks and seven 32Kword
blocks
- Bank 1 ~ Bank 15 contain one hundred twenty 32Kword blocks
•
Reduce program time using the V
PP
•
Support Single & Quad word accelerate program
•
Power Consumption (Typical value, C
L
=30pF)
- Burst Access Current : 30mA
- Program/Erase Current : 15mA
- Read While Program/Erase Current : 40mA
- Standby Mode/Auto Sleep Mode : 15uA
•
Block Protection/Unprotection
- Using the software command sequence
- Last two boot blocks are protected by WP=V
IL
- All blocks are protected by V
PP
=V
IL
•
Handshaking Feature
- Provides host system with minimum latency by monitoring
RDY
•
Erase Suspend/Resume
•
Program Suspend/Resume
•
Unlock Bypass Program/Erase
•
Hardware Reset (RESET)
•
Data Polling and Toggle Bits
- Provides a software method of detecting the status of program
or erase completion
•
Endurance
100K Program/Erase Cycles Minimum
•
Data Retention : 10 years
•
Extended Temperature : -25°C ~ 85°C
•
Support Common Flash Memory Interface
•
Low Vcc Write Inhibit
•
Package : TBD
NOR FLASH MEMORY
64M Bit (4M x16) Sync Burst , Multi Bank NOR Flash Memory
GENERAL DESCRIPTION
The K8A6415E featuring single 1.8V power supply is a 64Mbit
Muxed Burst Multi Bank Flash Memory organized as 4Mbx16.
The memory architecture of the device is designed to divide its
memory arrays into 135 blocks with independent hardware pro-
tection. This block architecture provides highly flexible erase
and program capability. The K8A6415E NOR Flash consists of
sixteen banks. This device is capable of reading data from one
bank while programming or erasing in the other bank.
Regarding read access time, the K8A6415E provides an 14.5ns
burst access time and an 90ns initial access time at 54MHz. At
66MHz, the K8A6415E provides an 11ns burst access time and
70ns initial access time. The device performs a program opera-
tion in units of Single 16 bits (word) and an erase operation in
units of a block. Single or multiple blocks can be erased. The
block erase operation is completed within typically 0.7 sec. The
device requires 15mA as program/erase current in the
extended temperature ranges.
The K8A6415E NOR Flash Memory is created by using Sam-
sung's advanced CMOS process technology.
PIN DESCRIPTION
Pin Name
A0 - A21
DQ0 - DQ15
CE
OE
RESET
V
PP
WE
WP
CLK
RDY
AVD
Vcc
V
SS
Pin Function
Address Inputs
Data input/output
Chip Enable
Output Enable
Hardware Reset Pin
Accelerates Programming
Write Enable
Hardware Write Protection Input
Clock
Ready Output
Address Valid Input
Power Supply
Ground
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
3
Revision 1.1
September, 2006
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