KTC9018I datasheet, PDF - EEWORLD Datasheet

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KTC9018I: DescriptionRF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size340KB，1 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC9018I Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN

KTC9018I Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.02 A
Collector-based maximum capacity	1 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	800 MHz

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SEMICONDUCTOR

TECHNICAL DATA

HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.

VHF BAND AMPLIFIER APPLICATION.

B

KTC9018

EPITAXIAL PLANAR NPN TRANSISTOR

C

FEATURES

・Small

Reverse Transfer Capacitance

: C

re

=0.65pF(Typ.).

・Low

Noise Figure : NF=2.2dB(Typ.) at f=100MHz.

・High

Transition Frequency : f

T

=800MHz(Typ.).

A

N

K

D

E

G

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

*Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

E

*P

C

400

T

j

T

stg

150

-55½150

℃

RATING

40

30

4

20

-20

625

mW

UNIT

V

L

F

H

F

1

2

3

V

mA

M

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Reverse Transfer Capacitance

Transition Frequency

Collector-Base Time Constant

Noise Figure

Power Gain

Note : h

FE

Classification E:40½59,

F:54½80,

SYMBOL

I

CBO

I

EBO

h

FE

(Note)

C

re

f

T

C

・rbb’

NF

V

CE

=6V, I

E

=-1mA, f=100MHz

G

pe

G:72½108,

H:97½146,

I:130½198

15

-

TEST CONDITION

V

CB

=40V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=5V, I

C

=1mA

V

CE

=6V, f=1MHz, I

E

=0

V

CE

=10V, I

C

=8mA, f=100MHz

V

CE

=6V, I

E

=-1mA, f=30MHz

MIN.

-

40

-

500

-

TYP.

-

800

-

MAX.

0.1

198

1.0

-

30

4.0

dB

pF

MHz

pS

UNIT

μ

A

μ

A

2013. 7. 08

Revision No : 4

1/1

KTC9018I Related Products

	KTC9018I	KTC9018E	KTC9018H	KTC9018G
Description	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
Maker	KEC	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A
Collector-based maximum capacity	1 pF	1 pF	1 pF	1 pF
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	800 MHz	800 MHz	800 MHz	800 MHz

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