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KTC9018H

Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size340KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KTC9018H Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN

KTC9018H Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.02 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
B
KTC9018
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
・Small
Reverse Transfer Capacitance
: C
re
=0.65pF(Typ.).
・Low
Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
・High
Transition Frequency : f
T
=800MHz(Typ.).
A
N
K
D
E
G
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
*P
C
400
T
j
T
stg
150
-55½150
RATING
40
30
4
20
-20
625
mW
UNIT
V
L
F
H
F
1
2
3
V
V
mA
mA
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
Power Gain
Note : h
FE
Classification E:40½59,
F:54½80,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
C
re
f
T
C
C
・rbb’
NF
V
CE
=6V, I
E
=-1mA, f=100MHz
G
pe
G:72½108,
H:97½146,
I:130½198
15
-
-
TEST CONDITION
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=6V, f=1MHz, I
E
=0
V
CE
=10V, I
C
=8mA, f=100MHz
V
CE
=6V, I
E
=-1mA, f=30MHz
MIN.
-
-
40
-
500
-
-
TYP.
-
-
-
-
800
-
-
MAX.
0.1
0.1
198
1.0
-
30
4.0
dB
pF
MHz
pS
UNIT
μ
A
μ
A
2013. 7. 08
Revision No : 4
1/1

KTC9018H Related Products

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Description RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
Maker KEC KEC KEC KEC
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A 0.02 A
Collector-based maximum capacity 1 pF 1 pF 1 pF 1 pF
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 800 MHz 800 MHz 800 MHz 800 MHz
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