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KTC9014C

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size339KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KTC9014C Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

KTC9014C Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
KTC9014
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.).
・Low
Noise :NF=1dB(Typ.) at f=1kHz.
・Complementary
to KTC9015.
K
D
E
G
J
N
A
・Excellent
h
FE
Linearity
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
*P
C
400
T
j
T
stg
150
-55½150
RATING
60
50
5
150
-150
625
mW
UNIT
V
L
F
H
F
1
2
3
M
V
V
mA
mA
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92 (F)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification A:60½150,
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
B:100½300,
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA, Rg=10kΩ, f=1kHz
C:200½600,
D:400½1000
MIN.
-
-
60
-
60
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
50
100
1000
0.25
-
3.5
10
V
MHz
pF
dB
UNIT
nA
nA
2013. 7. 08
Revision No : 4
1/1

KTC9014C Related Products

KTC9014C KTC9014B KTC9014D
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 TO-92, 3 PIN TO-92, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 100 400
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz
Maker KEC - KEC
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