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KSK211OL99Z

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
CategoryDiscrete semiconductor    The transistor   
File Size54KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSK211OL99Z Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET

KSK211OL99Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)0.15 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
KSK211
SILICON N-CHANNEL JUNCTION FET
FM TUNER
VHF AMPLIFIER
NF =2.5dB (TYP)
•Y
FS
=9.0
ms (TYP)
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Gate-Drain Voltage
Gate-Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
GDO
I
G
P
D
T
J
T
STG
Rating
-18
10
200
150
-55 ~ 125
Unit
V
mA
mW
°C
°C
1. Drain 2. Gate 3. Source
ELECTRICAL CHARACTERISTICS (T
A
=25 )
Characteristic
Gate Cut-off Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Forward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Symbol
I
GSS
V(BR)
GDO
I
DSS
V
GS
(off)
Y
FS
C
rSS
C
PS
NF
Test Conditions
V
GS
= 0.5V, V
DS
= 0
I
G
= -100µA, Drain
V
DS
=10V, V
GS
=0
V
DS
=10V, I
D
=1µA
V
DS
=10V, V
GS
=0,
f=1KHz
V
GD
=10V, f=1MHz
V
DD
=10V, f=100MHz
V
DD
=10V, f=100MHz
Min
Typ
Max
-10
-18
1.0
0.4
9
0.15
18
2.5
3.5
10
4.0
Unit
nA
V
mA
V
ms
pF
dB
dB
I
DSS
CLASSIFICATION
Classification
I
DSS
(mA)
O
1.0-3.0
Y
2.5-6.0
G
5.0-10
Rev. B
©
1999 Fairchild Semiconductor Corporation
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