K9KAG08U1M
K9F8G08U0M K9F8G08B0M
FLASH MEMORY
K9F8G08UXM
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AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K9KAG08U1M
K9F8G08U0M K9F8G08B0M
FLASH MEMORY
Document Title
1G x 8 Bit/ 2G x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
0.2
History
1. Initial issue
1. tCSD timing is added (min.10ns)
1. Add random data output after Read for copy
2. Add read for copy-back with data output timing guide
3. Modify 2-plane copy-back program operation
4. Modify 2KB program operation timing guide
5. Wafer level capacitance is added.
1. MONO/DDP LGA package is added.
2. tCSD is changed.(10ns -> 0ns)
Draft Date
Sep.26th 2006
Dec. 8th 2006
Remark
Advance
Advance
Feb. 15nd 2007 Preliminary
1.0
Mar. 31st 2007
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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K9KAG08U1M
K9F8G08U0M K9F8G08B0M
FLASH MEMORY
1G x 8 Bit/ 2G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F8G08B0M-P
K9F8G08U0M-P
K9F8G08U0M-I
K9KAG08U1M-I
2.7V ~ 3.6V
Vcc Range
2.5V ~ 2.9V
x8
52ULGA
Organization
PKG Type
TSOP1
FEATURES
•
Voltage Supply
- 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V
- 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V
•
Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (4K + 128) x 8bit
•
Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (256K + 8K)Byte
•
Page Read Operation
- Page Size : (4K + 128)Byte
- Random Read : 25µs(Max.)
- Serial Access : 25ns(Min.)
•
Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
•
Command Driven Operation
•
Intelligent Copy-Back with internal 1bit/528Byte EDC
•
Unique ID for Copyright Protection
•
Package :
- K9F8G08B0M-PCB0/PIB0
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9F8G08U0M-PCB0/PIB0
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9F8G08U0M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9KAG08U1M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
GENERAL DESCRIPTION
Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be per-
formed in typical 200µs on the (4K+128)Byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)Byte
block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data
input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repe-
tition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9F8G08X0M′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-
out algorithm. The K9F8G08X0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
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