IRHNJ597230SCSPBF datasheet, PDF

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IRHNJ597230SCSPBF: DescriptionPower Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size205KB，17 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRHNJ597230SCSPBF Overview

Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

IRHNJ597230SCSPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	CHIP CARRIER, R-CBCC-N3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	75 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.505 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

IRHNJ597230SCSPBF Preview

PD - 94046B

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number Radiation Level

IRHNJ597230 100K Rads (Si)

IRHNJ593230 300K Rads (Si)

DS(on)

0.505Ω

-8.0A

IRHNJ597230

200V, P-CHANNEL

TECHNOLOGY

SMD-0.5

International Rectifier’s R5

technology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = -12V, TC = 25°C

ID @ VGS = -12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

-8.0

-5.0

-32

0.6

±20

-8.0

7.5

-13.7

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 ( for 5s )

1.0 ( Typical )

For footnotes refer to the last page

www.irf.com

10/01/01

IRHNJ597230

Pre-Irradiation

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

—

0.24

—

4.0

—

0.505

-4.0

—

-10

-25

-100

100

135

—

V/°C

Ω

S( )

µA

Ω

Test Conditions

VGS = 0V, ID = -1.0mA

Reference to 25°C, ID = -1.0mA

VGS = -12V, ID = -5.0A

➃

VDS = VGS, ID = -1.0mA

VDS > -15V, IDS = -5.0A

➃

VDS= -160V ,VGS=0V

VDS = -160V,

VGS = 0V, TJ =125°C

VGS = -20V

VGS = 20V

VGS =-12V, ID = -8.0A

VDS = -100V

VDD = -100V, ID = -8.0A,

VGS =-12V, RG = 7.5Ω,

BVDSS

Drain-to-Source Breakdown Voltage

-200

∆BV

DSS/∆T J Temperature Coefficient of Breakdown —

Voltage

RDS(on)

Static Drain-to-Source On-State

—

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

gfs

Forward Transconductance

5.4

IDSS

Zero Gate Voltage Drain Current

—

IGSS

Q gs

Q gd

(on)

(off)

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

Measured from the center of

drain pad to center of source pad

VGS = 0V, VDS = -25V

f = 1.0MHz

Ciss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

1344

192

—

Source-Drain Diode Ratings and Characteristics

Parameter

ISM

VSD

t rr

Q RR

ton

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min Typ Max Units

—

-8.0

-32

-5.5

254

1.68

Test Conditions

µC

= 25°C, IS = -8.0A, VGS = 0V

➃

Tj = 25°C, IF =-8.0A, di/dt

≤

-100A/µs

VDD

≤

-50V

➃

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

RthJ-PCB

Junction-to-Case

Junction-to-PC board

Min Typ Max Units

—

6.9

1.67

—

°C/W

Test Conditions

soldered to a 2” square copper-clad board

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHNJ597230

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

➄➅

Parameter

DSS

GS(th)

GSS

DSS

DS(on)

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

➃

On-State Resistance (TO-3)

Static Drain-to-Source

➃

On-State Resistance (SMD-0.5)

Diode Forward Voltage

➃

100K Rads(Si)

Min

Max

-200

-2.0

—

-4.0

-100

100

-10

0.505

-5.5

300KRads(Si)

Min

Max

-200

-2.0

—

-5.0

-100

100

-10

0.505

-5.5

Units

µA

Ω

Test Conditions

= 0V, I

= -1.0mA

= V

, I

= -1.0mA

=-20V

= 20 V

=-160V, V

=0V

= -12V, I

=-5.0A

= -12V, I

=-5.0A

= 0V, IS = -8.0A

1. Part number IRHNJ597230

2. Part number IRHNJ593230

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion

LET

(MeV/(mg/cm

))

37.3

59.9

82.3

Energy

(MeV)

285

345

357

VDS (V)

Range

(µm)

@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V

36.8

- 200

-75

32.7

- 200

- 50

—

28.5

- 200

- 35

—

-250

-200

-150

VDS

-100

-50

VGS

Fig a.

Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNJ597230

Pre-Irradiation

100

-5.0V

-I

, Drain-to-Source Current (A)

-I

, Drain-to-Source Current (A)

VGS

TOP

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

BOTTOM -5.0V

100

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

BOTTOM -5.0V

TOP

-5.0V

20µs PULSE WIDTH

T = 25 C

100

20µs PULSE WIDTH

T = 150 C

100

-V

, Drain-to-Source Voltage (V)

-V

, Drain-to-Source Voltage (V)

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

100

2.5

-I

, Drain-to-Source Current (A)

= 25

DS(on)

, Drain-to-Source On Resistance

(Normalized)

= -8.0A

2.0

= 150

1.5

1.0

0.5

V DS = -50V

20µs PULSE WIDTH

0.0

-60 -40 -20

= -12V

80 100 120 140 160

-V

, Gate-to-Source Voltage (V)

, Junction Temperature(

Fig 3.

Typical Transfer Characteristics

Fig 4.

Normalized On-Resistance

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHNJ597230

2000

1600

-V

, Gate-to-Source Voltage (V)

= 0V,

f = 1MHz

iss

= C

+ C

gd ,

SHORTED

rss

= C

oss

= C

+ C

= -8.0A

C, Capacitance (pF)

Ciss

=-160V

=-100V

=-40V

1200

800

oss

400

rss

100

FOR TEST CIRCUIT

SEE FIGURE 13

-V

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5.

Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge Vs.

Gate-to-Source Voltage

100

1000

-I

, Reverse Drain Current (A)

-I D, Drain-to-Source Current (A)

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

= 150

= 25

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

100

1ms

10ms

0.1

1.0

= 0 V

2.0

3.0

4.0

5.0

6.0

-V

,Source-to-Drain Voltage (V)

1000

-V DS , Drain-toSource Voltage (V)

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

www.irf.com

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IRHNJ597230SCSPBF Related Products

	IRHNJ597230SCSPBF	IRHNJ597230SCS
Description	Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN	Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
Is it Rohs certified?	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	75 mJ	75 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (ID)	8 A	8 A
Maximum drain-source on-resistance	0.505 Ω	0.505 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	32 A	32 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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