S5277JTPA2 datasheet, PDF - EEWORLD Datasheet

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S5277JTPA2: DescriptionDIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size54KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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S5277JTPA2 Overview

DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode

S5277JTPA2 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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	S5277JTPA2	S5277BTPA1	S5277BTPA2	S5277GTPA1	S5277JTPA1	S5277GTPA2	S5277NTPA1	S5277NTPA2
Description	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	100 V	100 V	400 V	600 V	400 V	1000 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2

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