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KM44S16030BT-G10T

Description
Synchronous DRAM, 16MX4, 7ns, CMOS, PDSO54
Categorystorage    storage   
File Size556KB,11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM44S16030BT-G10T Overview

Synchronous DRAM, 16MX4, 7ns, CMOS, PDSO54

KM44S16030BT-G10T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionTSOP, TSOP54,.46,32
Reach Compliance Codeunknown
Maximum access time7 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width4
Number of terminals54
word count16777216 words
character code16000000
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.135 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
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