Fast Page DRAM Module, 2MX64, 70ns, CMOS, DIMM-168
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | DIMM |
| package instruction | , |
| Contacts | 168 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE |
| Maximum access time | 70 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| Spare memory width | 32 |
| JESD-30 code | R-XDMA-N168 |
| memory density | 134217728 bit |
| Memory IC Type | FAST PAGE DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 168 |
| word count | 2097152 words |
| character code | 2000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 2MX64 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified |
| refresh cycle | 2048 |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| KMM364V213AT-7 | KMM364V213AT-6 | KMM364V213AJ-6 | KMM364V213AJ-7 | |
|---|---|---|---|---|
| Description | Fast Page DRAM Module, 2MX64, 70ns, CMOS, DIMM-168 | Fast Page DRAM Module, 2MX64, 60ns, CMOS, DIMM-168 | Fast Page DRAM Module, 2MX64, 60ns, CMOS, DIMM-168 | Fast Page DRAM Module, 2MX64, 70ns, CMOS, DIMM-168 |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | DIMM | DIMM | DIMM | DIMM |
| Contacts | 168 | 168 | 168 | 168 |
| Reach Compliance Code | unknown | unknown | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| Maximum access time | 70 ns | 60 ns | 60 ns | 70 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| Spare memory width | 32 | 32 | 32 | 32 |
| JESD-30 code | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
| memory density | 134217728 bit | 134217728 bit | 134217728 bi | 134217728 bi |
| Memory IC Type | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE |
| memory width | 64 | 64 | 64 | 64 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 168 | 168 | 168 | 168 |
| word count | 2097152 words | 2097152 words | 2097152 words | 2097152 words |
| character code | 2000000 | 2000000 | 2000000 | 2000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 2MX64 | 2MX64 | 2MX64 | 2MX64 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 2048 | 2048 | 2048 | 2048 |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
京公网安备 11010802033920号
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