A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
FEATURES
BENEFITS
•
Operates from 2V, 3V, 5V to 10V
•
Flexible basic circuit building block and design element
•
Very high resolution -- average programmable voltage
resolution of 0.1mV
•
Wide dynamic range -- current levels from 0.1µA
to 3000µA
•
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
•
Proven, non-volatile CMOS technology
•
Typical 10 years drift of less than 2mV
•
Usable in voltage mode or current mode
•
High input impedance -- 10
12
Ω
•
Very high DC current gain -- greater than 10
9
•
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
•
Tight matching and tracking of on-resistance
between different devices with programming
•
Very low input currents and leakage currents
•
Low cost, monolithic technology
•
Application-specific or in-system programming modes
•
User programmable software-controlled automation
•
User programmability of any standard/custom
configuration
•
Micropower operation
•
Available in standard PDIP, SOIC and hermetic
CDIP packages
•
Suitable for matched-pair balanced circuit configuration
•
Suitable for both coarse and fine trimming applications
ORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
16-Pin
CERDIP
Package
ALD1108E DC
16-Pin
Plastic Dip
Package
ALD1108E PC
16-Pin
SOIC
Package
ALD1108E SC
•
Simple, elegant single-chip solution
•
•
•
•
•
•
•
•
•
to trimming voltage/current values
Direct in-circuit active element operation
and programming
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No system overhead or active circuitry required
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
Fully automated test and trimming environment
PIN CONFIGURATION
ALD1108E
P
N1
G
N1
D
N1
S
12
V-
D
N4
G
N4
P
N4
1
2
3
4
5
6
7
8
EPAD 4
EPAD 3
EPAD 1
EPAD 2
16
15
14
P
N2
G
N2
D
N2
V+
S
34
D
N3
G
N3
P
N3
v+
v-
13
12
11
10
9
DC, PC, SC PACKAGE
PIN CONFIGURATION
ALD1110E
1
EPAD 1
2
3
4
v+
EPAD 2
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
8-Pin
CERDIP
Package
ALD1110E DA
8-Pin
Plastic Dip
Package
ALD1110E PA
8-Pin
SOIC
Package
ALD1110E SA
P
N1
G
N1
D
N1
S
12
, V-
8
7
6
5
P
N2
G
N2
D
N2
V+
DA, PA, SA PACKAGE
* Contact factory for industrial temperature range
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically
Programmable Analog Device) that utilize CMOS MOSFET with elec-
trically programmable threshold voltage. For a given input voltage,
changing the threshold turn-on voltage of a MOSFET device precisely
changes its drain on-current, resulting in an on-resistance characteris-
tic that can be precisely set and controlled. Used as an in-circuit element
for trimming or setting a combination of voltage and/or current charac-
teristics, it can be programmed via a Personal Computer remotely and
automatically via software control. Once programmed and set, the set
voltage and current levels are stored indefinitely inside the device as a
precisely controlled nonvolatile stored charge, which is not affected
during normal operation of the device, even after power has been turned
off.
The ALD1108E/ALD1110E are devices built with ALD's EPAD technol-
ogy, an electrically programmable device technology refined for analog
applications. The ALD1108E/ALD1110E functions like a regular MOSFET
transistor except with precise user preset threshold voltage. Using the
ALD1108E/ALD1110E is simple and straight forward. The device is
extremely versatile as a circuit element and design component. It
presents the user with a wealth of possible applications, limited only by
the imagination of the user and the many ways an analog MOSFET
device can be used as a circuit design element. The ALD1108E/
ALD1110E do not need other active circuitry for functionality.
The basic device is a monotonically adjustable device which means the
device can normally be programmed to increase in threshold voltage
and to decrease in drain-on current as a function of a given input bias
voltage. Once adjusted, the voltage and current conditions are perma-
nent and not reversible. However, a given EPAD device can be adjusted
many times to continually increase the threshold voltage. A pair of EPAD
devices can also be connected such that one device is used to adjust a
parameter in one direction and the other device is used to adjust the
same parameter in the other direction.
The ALD1108E/ALD1110E can be pre-programmed with the ALD
EPAD programmer to obtain the desired voltage and current levels. Or,
they can be programmed as an active in-system element in a user
system, via user designed interface circuitry. For more information, see
Application Note AN1108.
•
Precision PC-based electronic calibration
•
Automated voltage trimming or setting
•
Remote voltage or current adjustment of
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
inaccessible nodes
PCMCIA based instrumentation trimming
Electrically adjusted resistive load
Temperature compensated current sources
and current mirrors
Electrically trimmed/calibrated current
sources
Permanent precision preset voltage level
shifter
Low temperature coefficient voltage and/or
current bias circuits
Multiple preset voltage bias circuits
Multiple channel resistor pull-up or pull-down
circuits
Microprocessor based process control systems
Portable data acquisition systems
Battery operated terminals and instruments
Remote telemetry systems
Programmable gain amplifiers
Low level signal conditioning
Sensor and transducer bias currents
Neural networks
BLOCK DIAGRAM
ALD1110E
V+(5)
P
N1
(1)
D
N1
(3)
D
N2
(6)
P
N2
(8)
~
G
N1
(2)
G
N2
(7)
EPAD 1
EPAD 2
S
12
(4)
BLOCK DIAGRAM
ALD1108E
V+(13)
P
N
(1)
D
N1
(3)
D
N2
(14)
P
N2
(16)
P
N3
(9)
D
N3
(11)
D
N4
(6)
P
N4
(8)
G
N1
(2)
S
12
(4)
ALD1108E/ALD1110E
Advanced Linear Devices
~
EPAD 1
~
V- (4)
~
G
N2
(15) G
N3
(10)
G
N4
(7)
EPAD 2
EPAD 3
EPAD 4
V- (5)
S
34
(12)
2
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
+
referenced to V
-
Supply voltage, V
S
referenced to V
-
Differential input voltage range
Power dissipation
Operating temperature range PA, SA, PC, SC package
DA, DC package
Storage temperature range
Lead temperature, 10 seconds
-0.3V to +13.2V
±6.6V
+
+0.3V
0.3V to V
600 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C V+ = +5.0V unless otherwise specified
ALD1108E
Parameter
Supply Voltage
Initial Threshold Voltage
Programmable Vt Range
Drain - Gate Connected
Voltage Tempco
Symbol
V+
V
t i
V
t
TCV
DS
Min
1.2
0.990
1.000
-1.6
-0.3
0.0
+2.7
Initial Offset
Voltage
Tempco of V
OS
Differential Threshold Voltage
Tempco of Differential
Threshold Voltage
Long Term Drift
Long Term Drift Match
Drain Source On Current
V
OS i
TCV
OS
DV
t
1
5
2.000
5
1
5
2.000
5
mV
µV/°C
V
V
DS1
= V
DS2
1.000
Typ
Max
10.0
1.010
3.000
Min
1.2
0.990
1.000
-1.6
-0.3
0.0
+2.7
1.000
ALD1110E
Typ
Max
10.0
1.010
3.000
Unit
V
V
V
mV/°C
mV/°C
mV/°C
mV/°C
I
D
= 5µA
I
D
= 50µA
I
D
= 68µA
I
D
= 500µA
I
DS
= 1µA T
A
= 21°C
Test
Conditions
TCDV
t
∆V
t
/∆t
∆V
t
/∆t
I
DS(ON)
0.033
-0.02
-5
3.0
-0.05
0.033
-0.02
-5
3.0
-0.05
mV/°C
mV
µV
mA
1000 Hours
1000 Hours
V
G
=V
D
= 5V V
S
= 0V
V
t
= 1.0
V
G
=V
D =
5V V
S =
0V
V
t
= 3.0
Drain Source On Current
I
DS(ON)
0.8
0.8
mA
Initial Zero Tempco Voltage
Zero Tempco Current
Initial On-Resistance
On-Resistance Match
V
ZTCi
I
ZTC
R
ON i
∆R
ON
1.52
68
500
0.5
1.52
68
500
0.5
V
µA
Ω
%
V
t
= 1.000V
V
GS
¡= 5V V
DS
= 0.1V
ALD1108E/ALD1110E
Advanced Linear Devices
3
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
T
A
= 25
°
C V+ = +5.0V unless otherwise specified
ALD1108E
Parameter
Transconductance
Transconductance Match
Low Level Output
Conductance
High Level Output
Conductance
Drain Off Leakage Current
Symbol
gm
∆gm
Min
Typ
1.4
25
Max
Min
ALD1110E
Typ
1.4
25
Max
Unit
mA/V
µA/V
Test
Conditions
V
D
= 10V,V
G
=V
t
+ 4.0
V
D
= 10V,V
G
=V
t
+ 4.0
g
OL
6
6
µA/V
V
G
= V
t
+0.5V
g
OH
I
D(OFF)
68
5
400
4
100
1
68
5
400
4
100
1
µA/V
pA
nA
pA
nA
pF
dB
Hours
%
V
G
= V
t
+4.0V
T
A
= 125°C
Gate Leakage Current
I
GSS
10
10
T
A
= 125°C
Input Capacitance
Cross Talk
Relaxation Time Constant
Relaxation Voltage
C
ISS
25
60
25
60
2
-0.3
f = 100KHz
t
RLX
V
RLX
2
-0.3
1.0V
≤
V
t
≤
3.0V
PROGRAMMING CHARACTERISTICS
T
A
= 25
°
C V+ = +5.0V unless otherwise specified
Parameter
Programmable V
t
Range
Resolution of V
t
Programming
Change in V
t
Per
Programming Pulse
RV
t
∆V
t
/ N
0.1
0.5
0.05
1
0.1
0.5
0.05
1
mV
mV/ pulse
V
t
= 1.0V
V
t
= 2.5V
Symbol
V
t
ALD1108E
Min
Typ
1.000
Max
3.000
ALD1110E
Min
Typ
1.000
Max
3.000
Unit
V
Test
Conditions
Programming Voltage
Programming Current
Pulse Frequency
Vp
Ip
ƒ pulse
11.75
12.00
2
50
12.25
11.75
12.00
2
50
12.25
V
mA
KH
Z
ALD1108E/ALD1110E
Advanced Linear Devices
4
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
20
OUTPUT CHARACTERISTICS
+1.0
DRAIN SOURCE ON CURRENT
(mA)
T
A
= +25°C
15
DRAIN SOURCE ON CURRENT
(mA)
V
GS
= +12V
V
GS
= +10V
V
GS
= + 8V
V
GS
= + 6V
T
A
= +25°C
V
GS
= +12V
V
GS
= +10V
10
0
V
GS
= +6V
V
GS
= +8V
5
V
GS
= + 4V
V
GS
= + 2V
0
0
2
4
6
8
10
12
-1.0
-200 -160 -120 -80 -40
0
40
80 120 160 +200
DRAIN SOURCE ON VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT
(mA)
6
3.0
V
G
= 5V
5
4
3
2
1
V
t
= 3.0V
0
-50
-25
0
25
50
75
100
125
V
t
= 1.0V
V
t
= 1.5V
V
t
= 2.0V
V
t
= 2.5V
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
V
GS
= +5V
2.0
V
GS
= +4V
T
A
= +25°C
V
DS
= +5.0V
DRAIN SOURCE ON CURRENT
(mA)
1.0
V
GS
= +3V
V
GS
= +2V
0
0
V
GS
= +1V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
2.0
T
A
= +25°C
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
75
HIGH LEVEL OUTPUT
CONDUCTANCE (µA/V)
TRANSCONDUCTANCE
( mA/V)
T
A
= +25°C
70
1.5
1.0
60
5.0
V
GS
= V
t
+ 4.0V
V
DS
= 10V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
= V
t
+ 4.0V
V
DS
= 5.0V
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
5
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