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NTE2343

Description
DARLINGTON TRANSISTOR NPN 120V; Transi
CategoryDiscrete semiconductor    The transistor   
File Size22KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Environmental Compliance
Download Datasheet Parametric Compare View All

NTE2343 Overview

DARLINGTON TRANSISTOR NPN 120V; Transi

NTE2343 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNTE
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment80 W
Maximum power dissipation(Abs)80 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTE2343 (NPN) & NTE2344 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector Current, I
C
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Symbol
Test Conditions
Min
100
1000
750
100
20
Typ
1.3
1.8
Max
100
1
2
1000
2.0
3.0
2.5
4.0
2.0
4.0
V
V
V
V
V
V
Unit
V
µA
mA
mA
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
I
CBO
I
CEO
Emitter Cutoff Current
DC Current Gain
I
EBO
h
FE
V
CB
= 100V, I
E
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 5A
V
CE
= 3V, I
C
= 10A
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
V
f
h
fe
I
C
= 5A, I
B
= 20mA, Note 1
I
C
= 10A, I
B
= 100mA, Note 1
Base–Emitter Saturation Voltage
I
C
= 5A, I
B
= 20mA, Note 1
I
C
= 10A, I
B
= 100mA, Note 1
Parallel Diode Forward Voltage
I
f
= 5A, Note 1
I
f
= 10A, Note 1
Small–Signal Current Gain
I
C
= 1A, V
CE
= 10V, f = 1MHz
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

NTE2343 Related Products

NTE2343 NTE2344
Description DARLINGTON TRANSISTOR NPN 120V; Transi DARLINGTON TRANSISTOR PNP -120V; Trans
Parts packaging code SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 12 A 12 A
Collector-emitter maximum voltage 100 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 100 100
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP
Maximum power consumption environment 80 W 80 W
Maximum power dissipation(Abs) 80 W 80 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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