NTE2344 datasheet, PDF - EEWORLD Datasheet

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NTE2344: DescriptionDARLINGTON TRANSISTOR PNP -120V; Trans; CategoryDiscrete semiconductor The transistor; File Size22KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE2344 Overview

DARLINGTON TRANSISTOR PNP -120V; Trans

NTE2344 Parametric

Parameter Name	Attribute value
Parts packaging code	SFM
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	80 W
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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NTE2343 (NPN) & NTE2344 (PNP)

Silicon Complementary Transistors

Darlington Power Amp, Switch

Absolute Maximum Ratings:

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector–Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector Current, I

DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Base Current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA

Collector Dissipation (T

= +25°C), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W

Operating Junction Temperature, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Symbol

Test Conditions

Min

100

–

1000

750

100

–

Typ

–

1.3

1.8

–

Max

–

100

–

1000

–

2.0

3.0

2.5

4.0

2.0

4.0

–

Unit

µA

CEO(sus)

= 100mA, I

= 0, Note 1

CBO

CEO

Emitter Cutoff Current

DC Current Gain

EBO

= 100V, I

= 0

= 100V, I

= 0

= 5V, I

= 0

= 3V, I

= 3A

= 3V, I

= 5A

= 3V, I

= 10A

Collector–Emitter Saturation Voltage

CE(sat)

BE(sat)

= 5A, I

= 20mA, Note 1

= 10A, I

= 100mA, Note 1

Base–Emitter Saturation Voltage

= 5A, I

= 20mA, Note 1

= 10A, I

= 100mA, Note 1

Parallel Diode Forward Voltage

= 5A, Note 1

= 10A, Note 1

Small–Signal Current Gain

= 1A, V

= 10V, f = 1MHz

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

NTE2344 Related Products

	NTE2344	NTE2343
Description	DARLINGTON TRANSISTOR PNP -120V; Trans	DARLINGTON TRANSISTOR NPN 120V; Transi
Parts packaging code	SFM	SFM
package instruction	TO-220, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	12 A	12 A
Collector-emitter maximum voltage	100 V	100 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	100	100
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN
Maximum power consumption environment	80 W	80 W
Maximum power dissipation(Abs)	80 W	80 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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