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Datasheet> All Categories > Discrete semiconductor> The transistor> PJC945QT
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PJC945QT

Description
Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size84KB，1 Pages
ManufacturerPromax-Johnton Electronic Corporation
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PJC945QT Overview

Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PJC945QT Parametric

Parameter NameAttribute value
MakerPromax-Johnton Electronic Corporation
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.12 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)135
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

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PJC945QT Related Products

PJC945QT PJC945KT PJC945RX PJC945RT PJC945X PJC945PX PJC945T PJC945QX PJC945PT PJC945KX
Description Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Maker Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation Promax-Johnton Electronic Corporation
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.12 A 0.12 A 0.12 A 0.12 A 0.12 A 0.12 A 0.12 A 0.12 A 0.12 A 0.12 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 135 300 90 90 90 200 90 135 200 300
JESD-30 code O-PBCY-T3 O-PBCY-T3 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND RECTANGULAR ROUND RECTANGULAR RECTANGULAR ROUND RECTANGULAR ROUND RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE CYLINDRICAL SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES NO YES YES NO YES NO YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING
Terminal location BOTTOM BOTTOM DUAL BOTTOM DUAL DUAL BOTTOM DUAL BOTTOM DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz

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