PJC945T datasheet, PDF - EEWORLD Datasheet

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PJC945T: DescriptionSmall Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size84KB，1 Pages; ManufacturerPromax-Johnton Electronic Corporation

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PJC945T Overview

Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PJC945T Parametric

Parameter Name	Attribute value
Maker	Promax-Johnton Electronic Corporation
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.12 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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PJC945T Related Products

	PJC945T	PJC945KT	PJC945RX	PJC945RT	PJC945X	PJC945PX	PJC945QX	PJC945PT	PJC945QT	PJC945KX
Description	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Maker	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A	0.12 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	90	300	90	90	90	200	135	200	135	300
JESD-30 code	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3	O-PBCY-T3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	ROUND	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	NO	YES	YES	YES	NO	NO	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	BOTTOM	DUAL	BOTTOM	DUAL	DUAL	DUAL	BOTTOM	BOTTOM	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz

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