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BD536

Description
TRANSISTOR,BJT,PNP,60V V(BR)CEO,4A I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size35KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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BD536 Overview

TRANSISTOR,BJT,PNP,60V V(BR)CEO,4A I(C),TO-220AB

BD536 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
Reach Compliance Codecompliant
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)3 MHz

BD536 Related Products

BD536 BD533 BD538
Description TRANSISTOR,BJT,PNP,60V V(BR)CEO,4A I(C),TO-220AB TRANSISTOR,BJT,NPN,45V V(BR)CEO,8A I(C),TO-220AB TRANSISTOR,BJT,PNP,80V V(BR)CEO,4A I(C),TO-220AB
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code compliant compliant compliant
Maximum collector current (IC) 4 A 8 A 4 A
Configuration Single Single Single
Minimum DC current gain (hFE) 25 25 15
JESD-609 code e0 e0 e0
Maximum operating temperature 140 °C 140 °C 140 °C
Polarity/channel type PNP NPN PNP
Maximum power dissipation(Abs) 50 W 50 W 50 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz
Maker National Semiconductor(TI ) - National Semiconductor(TI )
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