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BD533

Description
TRANSISTOR,BJT,NPN,45V V(BR)CEO,8A I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size35KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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BD533 Overview

TRANSISTOR,BJT,NPN,45V V(BR)CEO,8A I(C),TO-220AB

BD533 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)3 MHz
Base Number Matches1

BD533 Related Products

BD533 BD538 BD536
Description TRANSISTOR,BJT,NPN,45V V(BR)CEO,8A I(C),TO-220AB TRANSISTOR,BJT,PNP,80V V(BR)CEO,4A I(C),TO-220AB TRANSISTOR,BJT,PNP,60V V(BR)CEO,4A I(C),TO-220AB
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code compliant compliant compliant
Maximum collector current (IC) 8 A 4 A 4 A
Configuration Single Single Single
Minimum DC current gain (hFE) 25 15 25
JESD-609 code e0 e0 e0
Maximum operating temperature 140 °C 140 °C 140 °C
Polarity/channel type NPN PNP PNP
Maximum power dissipation(Abs) 50 W 50 W 50 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz
Maker - National Semiconductor(TI ) National Semiconductor(TI )

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