BC309A datasheet, PDF - EEWORLD Datasheet

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BC309A: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size117KB，2 Pages; ManufacturerCentral Semiconductor

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BC309A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

BC309A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-92
package instruction	TO-92, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

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BC307

BC308

BC309

PNP SILICON TRANSISTOR

Central

TM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC307,

BC308, and BC309 types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, designed for general purpose amplifier

applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCES

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

BC307

50

45

BC308

BC309

30

25

5.0

100

500

-65 to +150

250

UNITS

V

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICES

VCE=45V (BC307)

ICES

VCE=25V (BC308, BC309)

BVCES

IC=10μA (BC307)

50

BVCES

IC=10μA (BC308, BC309)

30

BVCEO

IC=2.0mA (BC307)

45

BVCEO

IC=2.0mA (BC308, BC309)

25

BVEBO

IE=10μA

5

VCE(SAT)

IC=10mA, IB=0.5mA

VBE(ON)

VCE=5.0V, IC=2.0mA

0.55

Cob

VCB=10V, IE=0, f=1.0MHz

Cib

VEB=0.5V, IC=0, f=1.0MHz

fT

VCE=5.0V, IC=10mA, f=50MHz

NF

VCE=5.0V, IC=0.2mA (BC307, BC308)

RG=2KΩ, f=1KHz

NF

VCE=5.0V, IC=0.2mA (BC309)

RG=2KΩ, f=30Hz-15KHz

BC307A

BC308A

BC309A

MIN

MAX

120

220

TYP

MAX

15

0.3

0.7

6

12

130

10

4

UNITS

nA

V

pF

MHz

dB

hFE

VCE=5.0V, IC=2.0mA

BC307B

BC308B

BC309B

MIN

MAX

180

460

BC307C

BC308C

BC309C

MIN

MAX

380

800

R0 (2-October 2008)

BC309A Related Products

	BC309A	HCHP2208K1651DFPT151	BC308B	BC309C	BC307A	BC307B	BC308C	BC309B	BC307C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Fixed Resistor, Metal Glaze/thick Film, 0.75W, 1650ohm, 200V, 0.5% +/-Tol, -100,100ppm/Cel, 2208,	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Reach Compliance Code	not_compliant	compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	compliant
Number of terminals	3	2	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	155 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package form	CYLINDRICAL	SMT	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Is it Rohs certified?	incompatible	conform to	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	TO-92	-	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	TO-92, 3 PIN	-	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN
Contacts	3	-	3	3	3	3	3	3	3
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	-
Collector-emitter maximum voltage	25 V	-	25 V	25 V	45 V	45 V	25 V	25 V	45 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	-	180	380	120	180	380	180	380
JEDEC-95 code	TO-92	-	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	-	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e2	e0	e0	e0	e0	e0	e0	-
Number of components	1	-	1	1	1	1	1	1	1
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.25 W	-	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	-	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz

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