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PH28F640W18TE60B

Description
Flash, 4MX16, 60ns, PBGA56, 9 X 7.70 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
Categorystorage    storage   
File Size1MB,106 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Environmental Compliance  
Download Datasheet Parametric View All

PH28F640W18TE60B Overview

Flash, 4MX16, 60ns, PBGA56, 9 X 7.70 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56

PH28F640W18TE60B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerIntel
Parts packaging codeBGA
package instruction9 X 7.70 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
Contacts56
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time60 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
JESD-30 codeR-PBGA-B56
JESD-609 codee1
length9 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals56
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature15
typeNOR TYPE
width7.7 mm
Intel® Wireless Flash Memory (W18)
28F320W18, 28F640W18, 28F128W18
Datasheet
Product Features
High Performance Read-While-Write/
Erase
— Burst frequency at 66 MHz
(zero wait states)
— 60 ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst
mode reads
— Burst and Page mode reads in all
Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at
3.1 µs/word
Security
— 128-bit OTP Protection Register:
64 unique pre-programmed bits +
64 user-programmable bits
— Absolute Write Protection with V
PP
at
ground
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
Capability
Quality and Reliability
— Temperature Range: –40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
—Multiple 4-Mbit partitions
—Dual Operation: RWW or RWE
—Parameter block size = 4-Kword
—Main block size = 32-Kword
—Top or bottom parameter devices
—16-bit wide data bus
Software
—5 µs (typ.) Program and Erase Suspend
latency time
—Flash Data Integrator (FDI) and
Common Flash Interface (CFI)
Compatible
—Programmable WAIT signal polarity
Packaging and Power
—90 nm: 32- and 64-Mbit in VF BGA
—130 nm: 32-, 64-, and 128-Mbit in VF
BGA; 128-Mbit in QUAD+ package
—56 Active Ball Matrix, 0.75 mm Ball-
Pitch
—V
CC
= 1.70 V to 1.95 V
—V
CCQ
(90 nm) = 1.70 V to 1.95 V
—V
CCQ
(130 nm) = 1.70 V to 2.24 V or
1.35 V to 1.80 V
—V
CCQ
(130 nm) = 1.35 V to 2.24 V
—Standby current (130 nm): 8 µA (typ.)
—Read current: 8 mA (4-word burst, typ.)
The Intel
®
Wireless Flash Memory (W18) device with flexible multi-partition dual-operation
architecture, provides high-performance Asynchronous and Synchronous Burst reads. It is an
ideal memory for low-voltage burst CPUs. Combining high read performance with flash
memory intrinsic non-volatility, the W18 device eliminates the traditional system-performance
paradigm of shadowing redundant code memory from slow nonvolatile storage to faster
execution memory. It reduces total memory requirement that increases reliability and reduces
overall system power consumption and cost. The W18 device’s flexible multi-partition
architecture allows program or erase to occur in one partition while reading from another
partition. This allows for higher data write throughput compared to single-partition architectures
and designers can choose code and data partition sizes. The dual-operation architecture allows
two processors to interleave code operations while program and erase operations take place in
the background.
Order Number: 290701, Revision: 015
07-Dec-2005
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