Standard SRAM, 256KX1, 20ns, CMOS, CDIP24
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Paradigm Technology Inc |
| package instruction | DIP, DIP24,.3 |
| Reach Compliance Code | unknown |
| Maximum access time | 20 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XDIP-T24 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Number of terminals | 24 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.17 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| PDM41257SA20DM | PDM41257LA25DB | PDM41257LA25DM | PDM41257LA20DM | PDM41257SA20DB | PDM41257SA25DB | PDM41257SA25DM | PDM41257SA15DM | |
|---|---|---|---|---|---|---|---|---|
| Description | Standard SRAM, 256KX1, 20ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 25ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 25ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 20ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 20ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 25ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 25ns, CMOS, CDIP24 | Standard SRAM, 256KX1, 15ns, CMOS, CDIP24 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | DIP, DIP24,.3 | DIP, DIP24,.3 | DIP, DIP24,.3 | DIP, DIP24,.3 | DIP, DIP24,.3 | DIP, DIP24,.3 | DIP, DIP24,.3 | DIP, DIP24,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 20 ns | 25 ns | 25 ns | 20 ns | 20 ns | 25 ns | 25 ns | 15 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| word count | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.02 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| Minimum standby current | 4.5 V | 2 V | 2 V | 2 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.17 mA | 0.14 mA | 0.14 mA | 0.15 mA | 0.17 mA | 0.16 mA | 0.16 mA | 0.18 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maker | Paradigm Technology Inc | - | - | - | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc |
京公网安备 11010802033920号
EEWORLD
