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Datasheet> All Categories > Discrete semiconductor> The transistor> NSBC123JPDXV6T1
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NSBC123JPDXV6T1

Description
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size822KB，15 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

NSBC123JPDXV6T1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
package instructionPLASTIC, CASE 463A-01, 6 PIN
Contacts6
Manufacturer packaging codeCASE 463A-01
Reach Compliance Codeunknown
Other featuresBUILT IN BIAS RESISTOR RATIO IS 21.36
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

NSBC123JPDXV6T1 Preview

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NSBC114EPDXV6T1,
NSBC114EPDXV6T5
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT-563
package which is ideal for low power surface mount applications
where board space is at a premium.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
R
1
(5)
(6)
http://onsemi.com
(2)
R
2
(1)
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
Pb-Free Packages are Available
6
1
SOT-563
CASE 463A
PLASTIC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted)
Rating
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING DIAGRAM
xx MG
G
xx = Specific Device Code
(see table on page 2)
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction‐to‐Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction‐to‐Ambient
Junction and Storage Temperature
Symbol
P
D
357
2.9
R
qJA
350
Max
500
4.0
R
qJA
T
J
, T
stg
250
- 55 to +150
Unit
mW
mW/°C
°C/W
°C
mW
mW/°C
°C/W
Max
Unit
ORDERING INFORMATION
Device
Package
Shipping
†
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
NSBC114EPDXV6T1 SOT-563
NSBC114EPDXV6T5 SOT-563
Symbol
P
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 4
Publication Order Number:
NSBC114EPDXV6/D
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EPDXV6T1
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1 (Note 2)
NSBC143TPDXV6T1 (Note 2)
NSBC113EPDXV6T1 (Note 2)
NSBC123EPDXV6T1 (Note 2)
NSBC143EPDXV6T1 (Note 2)
NSBC143ZPDXV6T1 (Note 2)
NSBC124XPDXV6T1 (Note 2)
NSBC123JPDXV6T1 (Note 2)
Package
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted)
Characteristic
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector‐Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter‐Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
I
CBO
I
CEO
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
-
-
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector‐Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector‐Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
-
-
-
-
-
-
-
-
-
-
-
-
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
http://onsemi.com
2
NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted)
Characteristic
ON CHARACTERISTICS
(Note 3)
Collector‐Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC123JPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
V
OL
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
NSBC144EPDXV6T1, G
V
OH
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
(I
C
= 10 mA, I
B
= 5 mA)
(I
C
= 10 mA, I
B
= 1 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
http://onsemi.com
3
NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, - minus sign for Q
1
(PNP) omitted)
Characteristic
ON CHARACTERISTICS
(Note 3)
Input Resistor
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
NSBC114EPDXV6T1, G
NSBC124EPDXV6T1, G
NSBC144EPDXV6T1, G
NSBC114YPDXV6T1, G
NSBC114TPDXV6T1, G
NSBC143TPDXV6T1, G
NSBC113EPDXV6T1, G
NSBC123EPDXV6T1, G
NSBC143EPDXV6T1, G
NSBC143ZPDXV6T1, G
NSBC124XPDXV6T1, G
NSBC123JPDXV6T1, G
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.8
0.8
0.17
-
-
0.8
0.8
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
1.0
1.0
0.21
-
-
1.0
1.0
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
1.2
1.2
0.25
-
-
1.2
1.2
1.2
0.185
0.56
0.056
k
W
Symbol
Min
Typ
Max
Unit
Resistor Ratio
R1/R2
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
- 50
R
qJA
= 490°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
http://onsemi.com
4
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NSBC123JPDXV6T1 Related Products

NSBC123JPDXV6T1 NSBC143EPDXV6T1 NSBC143TPDXV6T1 NSBC114YPDXV6T1 NSBC124EPDXV6T1 NSBC124XPDXV6T1 NSBC143ZPDXV6T1 NSBC123EPDXV6T1 NSBC114EPDXV6T1 NSBC114TPDXV6T1
Description 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
package instruction PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN
Contacts 6 6 6 6 6 6 6 6 6 6
Manufacturer packaging code CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01 CASE 463A-01
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknow
Other features BUILT IN BIAS RESISTOR RATIO IS 21.36 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 2.14 BUILT IN BIAS RESISTOR RATIO IS 10 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 15 160 80 60 80 80 8 35 160
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
Number of components 2 2 2 2 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260 260 260
Polarity/channel type NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP NPN AND PNP
Certification status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal surface MATTE TIN TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED 40 40 40 40 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Humidity sensitivity level - 1 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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