NSBC114YPDXV6T1 datasheet, PDF

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NSBC114YPDXV6T1: Description100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size822KB，15 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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NSBC114YPDXV6T1 Overview

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

NSBC114YPDXV6T1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
package instruction	PLASTIC, CASE 463A-01, 6 PIN
Contacts	6
Manufacturer packaging code	CASE 463A-01
Reach Compliance Code	unknown
Other features	BUILT IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	NOT SPECIFIED
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

NSBC114YPDXV6T1 Preview

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NSBC114EPDXV6T1,

NSBC114EPDXV6T5

Dual Bias Resistor

Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base-emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBC114EPDXV6T1

series, two complementary BRT devices are housed in the SOT-563

package which is ideal for low power surface mount applications

where board space is at a premium.

Features

(3)

(4)

(5)

(6)

http://onsemi.com

(2)

(1)

•

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Available in 8 mm, 7 inch Tape and Reel

Pb-Free Packages are Available

SOT-563

CASE 463A

PLASTIC

MAXIMUM RATINGS

= 25°C unless otherwise noted, common for Q

and Q

, - minus sign for Q

(PNP) omitted)

Rating

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

MARKING DIAGRAM

xx MG

xx = Specific Device Code

(see table on page 2)

M = Date Code

= Pb-Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

= 25°C (Note 1)

Derate above 25°C (Note 1)

Thermal Resistance (Note 1)

Junction‐to‐Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

= 25°C (Note 1)

Derate above 25°C (Note 1)

Thermal Resistance (Note 1)

Junction‐to‐Ambient

Junction and Storage Temperature

Symbol

357

2.9

qJA

350

Max

500

4.0

qJA

, T

stg

250

- 55 to +150

Unit

mW/°C

°C/W

°C

mW/°C

°C/W

Max

Unit

ORDERING INFORMATION

Device

Package

Shipping

†

4 mm pitch

4000/Tape & Reel

2 mm pitch

8000/Tape & Reel

NSBC114EPDXV6T1 SOT-563

NSBC114EPDXV6T5 SOT-563

Symbol

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ Minimum Pad

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 4

Publication Order Number:

NSBC114EPDXV6/D

NSBC114EPDXV6T1, NSBC114EPDXV6T5

DEVICE MARKING AND RESISTOR VALUES

Device

NSBC114EPDXV6T1

NSBC124EPDXV6T1

NSBC144EPDXV6T1

NSBC114YPDXV6T1

NSBC114TPDXV6T1 (Note 2)

NSBC143TPDXV6T1 (Note 2)

NSBC113EPDXV6T1 (Note 2)

NSBC123EPDXV6T1 (Note 2)

NSBC143EPDXV6T1 (Note 2)

NSBC143ZPDXV6T1 (Note 2)

NSBC124XPDXV6T1 (Note 2)

NSBC123JPDXV6T1 (Note 2)

Package

SOT-563

Marking

R1 (kW)

4.7

1.0

2.2

4.7

2.2

R2 (kW)

∞

1.0

2.2

4.7

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted, common for Q

and Q

, - minus sign for Q

(PNP) omitted)

Characteristic

OFF CHARACTERISTICS

Collector‐Base Cutoff Current (V

= 50 V, I

= 0)

Collector‐Emitter Cutoff Current (V

= 50 V, I

= 0)

Emitter‐Base Cutoff Current

= 6.0 V, I

= 0)

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC143EPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC123JPDXV6T1, G

CBO

CEO

EBO

100

500

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

nAdc

mAdc

Symbol

Min

Typ

Max

Unit

Collector‐Base Breakdown Voltage (I

= 10

mA,

= 0)

Collector‐Emitter Breakdown Voltage (Note 3) (I

= 2.0 mA, I

= 0)

ON CHARACTERISTICS

(Note 3)

DC Current Gain

= 10 V, I

= 5.0 mA)

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC143EPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC123JPDXV6T1, G

(BR)CBO

(BR)CEO

Vdc

160

3.0

8.0

100

140

350

5.0

200

150

140

2. New resistor combinations. Updated curves to follow in subsequent data sheets.

3. Pulse Test: Pulse Width < 300

ms,

Duty Cycle < 2.0%

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NSBC114EPDXV6T1, NSBC114EPDXV6T5

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted, common for Q

and Q

, - minus sign for Q

(PNP) omitted)

Characteristic

ON CHARACTERISTICS

(Note 3)

Collector‐Emitter Saturation Voltage

= 10 mA, I

= 0.3 mA)

CE(sat)

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC123JPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC143EPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC143EPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC123JPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC123JPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC143EPDXV6T1, G

4.9

0.2

Vdc

0.25

Vdc

Symbol

Min

Typ

Max

Unit

= 10 mA, I

= 5 mA)

= 10 mA, I

= 1 mA)

Output Voltage (on)

= 5.0 V, V

= 2.5 V, R

= 1.0 kW)

= 5.0 V, V

= 3.5 V, R

= 1.0 kW)

Output Voltage (off)

= 5.0 V, V

= 0.5 V, R

= 1.0 kW)

= 5.0 V, V

= 0.050 V, R

= 1.0 kW)

= 5.0 V, V

= 0.25 V, R

= 1.0 kW)

2. New resistor combinations. Updated curves to follow in subsequent data sheets.

3. Pulse Test: Pulse Width < 300

ms,

Duty Cycle < 2.0%

http://onsemi.com

NSBC114EPDXV6T1, NSBC114EPDXV6T5

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted, common for Q

and Q

, - minus sign for Q

(PNP) omitted)

Characteristic

ON CHARACTERISTICS

(Note 3)

Input Resistor

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC143EPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC123JPDXV6T1, G

NSBC114EPDXV6T1, G

NSBC124EPDXV6T1, G

NSBC144EPDXV6T1, G

NSBC114YPDXV6T1, G

NSBC114TPDXV6T1, G

NSBC143TPDXV6T1, G

NSBC113EPDXV6T1, G

NSBC123EPDXV6T1, G

NSBC143EPDXV6T1, G

NSBC143ZPDXV6T1, G

NSBC124XPDXV6T1, G

NSBC123JPDXV6T1, G

2. New resistor combinations. Updated curves to follow in subsequent data sheets.

3. Pulse Test: Pulse Width < 300

ms,

Duty Cycle < 2.0%

7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

1.54

0.8

0.17

0.8

0.055

0.38

0.038

4.7

1.0

2.2

4.7

2.2

1.0

0.21

1.0

0.1

0.47

0.047

28.6

61.1

6.1

1.3

2.9

6.1

28.6

2.86

1.2

0.25

1.2

0.185

0.56

0.056

Symbol

Min

Typ

Max

Unit

Resistor Ratio

R1/R2

300

, POWER DISSIPATION (mW)

250

200

150

100

- 50

qJA

= 490°C/W

100

, AMBIENT TEMPERATURE (°C)

150

Figure 1. Derating Curve

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NSBC114YPDXV6T1 Related Products

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Description	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics	Rochester Electronics
package instruction	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN	PLASTIC, CASE 463A-01, 6 PIN
Contacts	6	6	6	6	6	6	6	6	6	6
Manufacturer packaging code	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01	CASE 463A-01
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Other features	BUILT IN BIAS RESISTOR RATIO IS 4.7	BUILT IN BIAS RESISTOR RATIO IS 21.36	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 2.14	BUILT IN BIAS RESISTOR RATIO IS 10	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	15	160	60	80	80	8	35	160
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3	e3	e3
Number of components	2	2	2	2	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260	260
Polarity/channel type	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP	NPN AND PNP
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	NOT SPECIFIED	40	40	40	40	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Humidity sensitivity level	NOT SPECIFIED	-	1	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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