EEWORLDEEWORLDEEWORLD

Part Number

Search

SF1004G

Description
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size321KB,3 Pages
ManufacturerFagor Electrónica
Environmental Compliance  
Download Datasheet Parametric Compare View All

SF1004G Online Shopping

Suppliers Part Number Price MOQ In stock  
SF1004G - - View Buy Now

SF1004G Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3

SF1004G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFagor Electrónica
Parts packaging codeTO-220AB
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
Other featuresUL RECOGNITION
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

SF1004G Preview

SF10G
10 Amp. Glass Passivated Ultrafast Recovery Rectifier
TO-220AB
2
Voltage
200 to 600 V
• Glass Passivated Junction
• High current capability
Current
10 A
1
23
1
3
• The plastic material
U/L recognition 94 V-0
2
Case
• Terminals: Leads solderable per
MIL-STD202
• Low forward Voltage drop
Common Cathode
Suffix "C"
Absolute Maximum Ratings, according to IEC publication No. 134
SF1004G
200
140
200
V
RRM
V
RMS
V
DC
I
F (AV)
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Maximum DC blocking voltage (V)
Maximum Average Forward current
at T
C
= 100 °C
(both diodes conducting)
8.3 ms. peak forward surge current
(Jedec Method)
SF1006G
400
280
400
10 A
SF1008G
600
420
600
I
FSM
t
RR
C
j
T
j
T
stg
125 A
35 ns
70 pF
50 pF
– 65 to + 150 °C
– 65 to + 150 °C
Max. reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
Typical Junction Capacitance at 1 MHz
and reverse voltaje of 4V
DC
Operating temperature range
Storage temperature range
Electrical Characteristics
SF1004G
V
F
I
R
R
thj-C
Max. forward voltage drop
at I
F
= 5 A
Max. Instantaneous reverse
current at V
R
= V
RRMax
Typical Thermal Resistance
T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
0.975 V
SF1006G
1.3 V
10 µA
400 µA
3.5 °C/W
SF1008G
1.7 V
Jul - 07
SF10G
10 Amp. Glass Passivated Ultrafast Recovery Rectifier
TYPICAL FORWARD CHARACTERISTIC
FORWARD CURRENT DERATING CURVE
100
I
F,
instantaneous forward current (A)
14
I
F(AV)
, average forward rectified current (A)
PULSE WIDTH = 300 µs
1% DUTY CYCLE
RESISTIVE OR INDUCTIVE LOAD
30
10
3
1
0.3
0.1
0.03
12
10
8
6
4
2
0
04
SF
10
SF
06
G
10
G
8G
00
1
SF
T
j
= 25 °C
0.01
0.4 0.6 0.8
1.0
1.2 1.4 1.6
1.8
0
50
100
150
V
F
, instantaneous forward voltage (V)
T
C
, case temperature (°C)
MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
TYPICAL JUNCTION CAPACITANCE
150
T
j
= 25 °C
100
T
j
= 25 °C
I
FSM
, peak forward surge current (A)
C
j
, junction capacitance (pF)
120
90
80
SF1004G
90
70
60
60
30
50
SF1006G-SF1008G
0
1
2
5
10
20
50
100
40
1
2
5
10
20
50
100
Number of cycles at 60 Hz.
V
R
, reverse voltage (V)
Jul - 07
SF10G
10 Amp. Glass Passivated Ultrafast Recovery Rectifier
PACKAGE MECHANICAL DATA
TO-220AB
REF.
A
B
C
D
E
F
G
L2
L3
L4
L5
L7
DIA
DIMENSIONS
Milimeters
Max.
Min.
4.44
1.14
2.54
0.35
--
0.68
2.41
13.46
14.90
2.62
3.56
5.84
3.74
4.70
1.40
2.79
0.64
10.5
0.94
2.67
14.22
15.10
2.87
4.06
6.86
3.91
Jul - 07

SF1004G Related Products

SF1004G SF1008G SF1006G
Description Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Fagor Electrónica Fagor Electrónica Fagor Electrónica
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3
Reach Compliance Code compliant unknown compliant
Other features UL RECOGNITION UL RECOGNITION UL RECOGNITION
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Maximum non-repetitive peak forward current 125 A 125 A 125 A
Number of components 2 2 2
Phase 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 600 V 400 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1763  2274  616  2681  294  36  46  13  54  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号