TPC8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
−π−MOSVI)
TPC8301
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain−source ON resistance
: R
DS (ON)
= 95 mΩ (typ.)
High forward transfer admittance : |Y
fs
| = 4 S (typ.)
Low leakage current : I
DSS
=
−10
µA (max) (V
DS
=
−30
V)
Enhancement−mode : V
th
=
−0.8~ −2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−30
−30
±20
−3.5
−14
1.5
W
1.0
0.75
W
0.45
16
−3.5
0.10
150
−55∼150
mJ
A
mJ
℃
℃
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
―
―
2-6J1E
Single-device
Drain power
operation (Note 3a)
dissipation
Single-devece value
(t = 10 s)
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-devece value
(t = 10 s)
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Single-device
operation (Note 3a)
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-05-17
TPC8301
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Symbol
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
Max
83.3
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
125
°C/W
167
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
278
Marking
TPC8301
*
Type
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
=
−24
V, T
ch
= 25°C (Initial), L = 1.0 mH, R
G
= 25
Ω,
I
AR
=
−3.5
A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
•
on lower left of the marking indicates Pin 1.
*
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
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2002-05-17
TPC8301
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−OFF current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −24
V, V
GS
=
−10
V, I
D
=
−3.5
A
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−1.8
A
V
GS
=
−10
V, I
D
=
−1.8
A
V
DS
=
−10
V, I
D
=
−1.8
A
Min
—
—
−30
−0.8
—
—
2
—
—
—
—
Typ.
—
—
—
—
155
95
4
540
80
290
11
Max
±10
−10
—
−2.0
190
120
—
—
—
—
—
pF
Unit
µA
µA
V
V
mΩ
S
Turn−ON time
Switching time
Fall time
—
17
—
ns
—
11
—
Turn−OFF time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
—
—
—
—
70
18
13
5
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Symbol
I
DRP
V
DSF
Test Condition
—
I
DR
=
−3.5
A, V
GS
= 0 V
Min
—
—
Typ.
—
—
Max
−14
1.2
Unit
A
V
Forward voltage (diode)
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2002-05-17
TPC8301
4
2002-05-17
TPC8301
P
D
– Ta
(W)
2.0
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a)
(1) SINGLE-DEVICE OPERATION
(NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)
DRAIN POWER DISSIPATION P
D
1.5
(1)
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(NOTE 3b)
(4) SINGLE-DEVICE VALUE AT DUAL OPERATION
(2)
1.0
(3)
t
=
10 s
0.5
(4)
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta (
°
C)
5
2002-05-17
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