TK15J60T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
TK15J60T
Switching Regulator Applications
15.9max.
Ф3.2±0.2
1.0
4.5
9.0
Unit: mm
3.3max.
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
15
30
170
118
15
17
150
-55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1.8max.
0.6
－0.1
＋0.3
1.0
－0.25
＋0.3
5.45±0.2
5.45±0.2
4.8max.
1
2
3
2.8
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
JEITA
TOSHIBA
⎯
SC-65
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.735
50
Unit
2
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25 °C (initial), L = 0.92 mH, R
G
= 25
Ω,
I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
1
2011-05-06
20.5±0.5
2.0±0.3
2.0
20.0±0.3
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.24
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
⎪
= 9.5 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 600 V)
Enhancement-mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
2.0
TK15J60T
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
15 A
Duty
≤
1%, t
w
=
10
μs
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
7.5A
V
OUT
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
7.5 A
V
DS
=
10 V, I
D
=
7.5 A
Min
―
―
600
3.0
―
3
―
―
Typ.
―
―
―
―
0.24
9.5
1200
120
2700
35
70
9
85
21
12
9
Max
±1
100
―
5.0
0.30
―
―
―
pF
Unit
μA
μA
V
V
Ω
S
―
―
―
―
―
―
―
―
―
―
―
ns
R
L
=
40Ω
V
DD
≈
300 V
―
―
―
―
―
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
―
―
I
DR
=
15 A, V
GS
=
0 V
I
DR
=
15 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
―
―
―
―
―
Typ.
―
―
―
400
7.5
Max
15
30
-1.7
―
―
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
TOSHIBA
K15J60T
Part No.
(or abbreviation code)
Lot No.
Note 4
2
2011-05-06
TK15J60T
I
D
– V
DS
10
Common source
Tc
=
25°C
Pulse Test
30
8
10
7
7.5
6.5
24
10
I
D
– V
DS
8
Common source
Tc
=
25°C
Pulse Test
7.5
18
7
12
6.5
6
8
(A)
ID
6
Drain current
4
6
2
Drain current
ID
(A)
VGS
=
5.5V
6
VGS
=
5.5 V
0
0
1
2
3
4
5
0
0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
I
D
– V
GS
30
Common source
VDS
=
20 V
Pulse Test
10
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse Test
24
(V)
VDS
Drain-source voltage
8
ID (A)
18
6
Drain current
12
Tc
= −55°C
100
6
25
4
ID
=
15 A
2
7.5
4
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Y
fs
| – I
D
(Ω)
100
Common source
VDS
=
10 V
Pulse Test
Tc
= −55°C
100
25
10
R
DS (ON)
– I
D
Common source
Tc
=
25°C
Pulse Test
(S)
10
Drain-source ON-resistance RDS (ON)
Forward transfer admittance
⎪Y
fs
⎪
1
VGS
=
10,15 V
1
0.1
0.1
0.1
1
10
100
0.01
1
10
100
Drain current ID (A)
Drain current ID (A)
3
2011-05-06
TK15J60T
R
DS (ON)
−
Tc
(Ω)
1
Common source
VGS
=
10 V
Pulse Test
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
Drain-source ON-resistance RDS (ON)
0.8
Drain reverse current IDR (A)
0.6
ID
=
15A
7.5
4
10
10,15
5
0.4
1
3
0.2
1
VGS
=
0 V
0
−80
−40
0
40
80
120
160
0.1
0
-0.3
-0.6
-0.9
-1.2
-1.5
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
Capacitance – V
DS
10000
5
V
th
−
Tc
Gate threshold voltage Vth (V)
(pF)
1000
Ciss
4
Capacitance C
3
100
Coss
2
10
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
10
1
Crss
1
0.1
100
0
−80
Common source
VDS
=
10 V
ID
=
1mA
Pulse Test
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
200
500
Dynamic input / output
characteristics
20
Common source
ID
=
15 A
Tc
=
25°C
16
Pulse Test
200
300
VDD
=
100V
400
200
VGS
100
4
8
12
Drain power dissipation PD (W)
(V)
160
400
Drain-source voltage
80
40
0
0
40
80
120
160
200
0
0
0
6
12
18
24
30
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2011-05-06
Gate-source voltage
120
VGS (V)
VDS
VDS
TK15J60T
r
th
– t
w
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
SINGLE PULSE
PDM
t
0.05
0.02
0.01
T
Duty
=
t/T
Rth (ch-c)
=
0.735°C/W
100μ
1m
10m
100m
1
10
0.1
0.01
10μ
Pulse width
t
w
(s)
SAFE OPERATING AREA
100
160
ID max (pulse)
*
ID max (continuous)
10
1 ms
*
100
μs
*
E
AS
– T
ch
E
AS
(mJ)
Avalanche energy
120
Drain current I
D
(A)
1
DC OPERATION
Tc
=
25°C
80
0.1
40
0.01
*
Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
VDSS max
0
25
50
75
100
125
150
Channel temperature (initial)
1000
T
ch
(°C)
0.001
1
10
100
Drain-source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
0.92 mH
WAVEFORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
2
−
VDD
⎟
⎝
VDSS
⎠
5
2011-05-06
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