600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | STMicroelectronics |
| package instruction | E-LALF-W2 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Maximum breakdown voltage | 10.5 V |
| Minimum breakdown voltage | 9.5 V |
| Breakdown voltage nominal value | 10 V |
| Shell connection | ISOLATED |
| Maximum clamping voltage | 14.5 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | E-LALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak reverse power dissipation | 600 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | GLASS |
| Package shape | ELLIPTICAL |
| Package form | LONG FORM |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 3 W |
| Maximum repetitive peak reverse voltage | 7.6 V |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| GT6106A | GT6109 | GT6102 | GT6107 | GT6108 | GT6109A | GT6108A | |
|---|---|---|---|---|---|---|---|
| Description | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN | 600W, UNIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | E-LALF-W2 | GLASS, CB-431, 2 PIN | GLASS, CB-431, 2 PIN | GLASS, CB-431, 2 PIN | E-LALF-W2 | GLASS, CB-431, 2 PIN | GLASS, CB-431, 2 PIN |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum breakdown voltage | 10.5 V | 14.3 V | 7.48 V | 12.1 V | 13.2 V | 13.65 V | 12.6 V |
| Minimum breakdown voltage | 9.5 V | 11.7 V | 6.12 V | 9.9 V | 10.8 V | 12.35 V | 11.4 V |
| Breakdown voltage nominal value | 10 V | 13 V | 6.8 V | 11 V | 12 V | 13 V | 12 V |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum clamping voltage | 14.5 V | 19 V | 10.8 V | 16.2 V | 17.3 V | 18.2 V | 16.7 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 | E-LALF-W2 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak reverse power dissipation | 600 W | 600 W | 600 W | 600 W | 600 W | 600 W | 600 W |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL | ELLIPTICAL |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| polarity | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL |
| Maximum power dissipation | 3 W | 3 W | 3 W | 3 W | 3 W | 3 W | 3 W |
| Maximum repetitive peak reverse voltage | 7.6 V | 9.9 V | 5.2 V | 8.4 V | 9.1 V | 9.9 V | 9.1 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| technology | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | STMicroelectronics | - | - | - | STMicroelectronics | STMicroelectronics | STMicroelectronics |