BSTL6113Y datasheet, PDF - EEWORLD Datasheet

BSTL6113Y: DescriptionSilicon Controlled Rectifier, 320000mA I(T), 200V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size62KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSTL6113Y Overview

Silicon Controlled Rectifier, 320000mA I(T), 200V V(DRM)

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
Nominal circuit commutation break time	150 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	250 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	150 mA
Maximum leakage current	15 mA
On-state non-repetitive peak current	4500 A
Maximum on-state voltage	1.4 V
Maximum on-state current	320000 A
Maximum operating temperature	140 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	200 V
surface mount	NO
Trigger device type	SCR

	BSTL6113Y	BSTL4560	BSTL45110	BSTM45110
Description	Silicon Controlled Rectifier, 320000mA I(T), 200V V(DRM)	Silicon Controlled Rectifier, 240000mA I(T), 900V V(DRM)	Silicon Controlled Rectifier, 240000mA I(T), 1600V V(DRM)	Silicon Controlled Rectifier, 350000mA I(T), 1600V V(DRM)
Reach Compliance Code	compliant	compliant	compliant	compli
Nominal circuit commutation break time	150 µs	180 µs	180 µs	180 µs
Maximum DC gate trigger current	250 mA	250 mA	250 mA	250 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	150 mA	250 mA	250 mA	250 mA
Maximum leakage current	15 mA	15 mA	15 mA	25 mA
On-state non-repetitive peak current	4500 A	2900 A	2900 A	5200 A
Maximum on-state voltage	1.4 V	2.5 V	2.3 V	2.2 V
Maximum on-state current	320000 A	240000 A	240000 A	350000 A
Maximum operating temperature	140 °C	125 °C	125 °C	125 °C
Off-state repetitive peak voltage	200 V	900 V	1600 V	1600 V
surface mount	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR
Maker	Infineon	-	Infineon	Infineon
Critical rise rate of minimum off-state voltage	200 V/us	-	500 V/us	500 V/us

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