BSTM45110 datasheet, PDF - EEWORLD Datasheet

BSTM45110: DescriptionSilicon Controlled Rectifier, 350000mA I(T), 1600V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size62KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSTM45110 Overview

Silicon Controlled Rectifier, 350000mA I(T), 1600V V(DRM)

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compli
ECCN code	EAR99
Nominal circuit commutation break time	180 µs
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	250 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	250 mA
Maximum leakage current	25 mA
On-state non-repetitive peak current	5200 A
Maximum on-state voltage	2.2 V
Maximum on-state current	350000 A
Maximum operating temperature	125 °C
Off-state repetitive peak voltage	1600 V
surface mount	NO
Trigger device type	SCR

	BSTM45110	BSTL4560	BSTL45110	BSTL6113Y
Description	Silicon Controlled Rectifier, 350000mA I(T), 1600V V(DRM)	Silicon Controlled Rectifier, 240000mA I(T), 900V V(DRM)	Silicon Controlled Rectifier, 240000mA I(T), 1600V V(DRM)	Silicon Controlled Rectifier, 320000mA I(T), 200V V(DRM)
Reach Compliance Code	compli	compliant	compliant	compliant
Nominal circuit commutation break time	180 µs	180 µs	180 µs	150 µs
Maximum DC gate trigger current	250 mA	250 mA	250 mA	250 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	250 mA	250 mA	250 mA	150 mA
Maximum leakage current	25 mA	15 mA	15 mA	15 mA
On-state non-repetitive peak current	5200 A	2900 A	2900 A	4500 A
Maximum on-state voltage	2.2 V	2.5 V	2.3 V	1.4 V
Maximum on-state current	350000 A	240000 A	240000 A	320000 A
Maximum operating temperature	125 °C	125 °C	125 °C	140 °C
Off-state repetitive peak voltage	1600 V	900 V	1600 V	200 V
surface mount	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR
Maker	Infineon	-	Infineon	Infineon
Critical rise rate of minimum off-state voltage	500 V/us	-	500 V/us	200 V/us

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