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CSD17556Q5B

Description
30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150
CategoryDiscrete semiconductor    The transistor   
File Size1MB,15 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Environmental Compliance
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CSD17556Q5B Overview

30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150

CSD17556Q5B Parametric

Parameter NameAttribute value
Brand NameTexas Instruments
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTexas Instruments
package instructionVSON-8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time6 weeks
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.0018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)88 pF
JESD-30 codeR-PDSO-N8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)191 W
Maximum pulsed drain current (IDM)214 A
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

CSD17556Q5B Related Products

CSD17556Q5B CSD17556Q5BT
Description 30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150 30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150
Brand Name Texas Instruments Texas Instruments
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to incompatible
Maker Texas Instruments Texas Instruments
package instruction VSON-8 SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code not_compliant _compli
Factory Lead Time 6 weeks 6 weeks
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 34 A 34 A
Maximum drain-source on-resistance 0.0018 Ω 0.0018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 88 pF 88 pF
JESD-30 code R-PDSO-N8 R-PDSO-N5
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 214 A 214 A
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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