CSD17556Q5BT datasheet, PDF - EEWORLD Datasheet

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CSD17556Q5BT: Description30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150; CategoryDiscrete semiconductor The transistor; File Size1MB，15 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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CSD17556Q5BT Overview

30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150

CSD17556Q5BT Parametric

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code	_compli
Factory Lead Time	6 weeks
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	34 A
Maximum drain-source on-resistance	0.0018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	88 pF
JESD-30 code	R-PDSO-N5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	214 A
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

CSD17556Q5BT Related Products

	CSD17556Q5BT	CSD17556Q5B
Description	30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150	30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150
Brand Name	Texas Instruments	Texas Instruments
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	incompatible	conform to
Maker	Texas Instruments	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-N5	VSON-8
Reach Compliance Code	_compli	not_compliant
Factory Lead Time	6 weeks	6 weeks
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	500 mJ	500 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	34 A	34 A
Maximum drain-source on-resistance	0.0018 Ω	0.0018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	88 pF	88 pF
JESD-30 code	R-PDSO-N5	R-PDSO-N8
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	5	5
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	214 A	214 A
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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