HGTP5N120BN, HGT1S5N120BNS
Data Sheet
January 2000
File Number
4599.2
21A, 1200V, NPT Series N-Channel IGBTs
The HGTP5N120BN and the HGT1S5N120BNS are
N
on-
P
unch
T
hrough (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49308.
Features
• 21A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .175ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•
Thermal Impedance
SPICE Model
Temperature Compensating
SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HGTP5N120BN
HGT1S5N120BNS
PACKAGE
TO-220AB
TO-263AB
BRAND
5N120BN
5N120BN
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
Symbol
C
JEDEC TO-263AB
G
COLLECTOR
(FLANGE)
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP5N120BN, HGT1S5N120BNS Rev. A
HGTP5N120BN, HGT1S5N120BNS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP5N120BN,
HGT1S5N120BNS
1200
21
10
40
±
20
±
30
30A at 1200V
167
1.33
36
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
o
C
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
µ
s
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 12A, L = 500
µ
H.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 25
Ω
.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
MIN
1200
15
-
-
-
-
-
6.0
-
30
TYP
-
-
-
100
-
2.45
3.7
6.8
-
-
MAX
-
-
250
-
1.5
2.7
4.2
-
±
250
-
UNITS
V
V
µ
A
µ
A
mA
V
V
V
nA
A
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 5A,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 45
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 25
Ω,
V
GE
= 15V,
L = 5mH, V
CE(PK)
= 1200V
I
C
= 5A, V
CE
= 0.5 BV
CES
I
C
= 5A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
-
-
-
10.5
53
60
-
65
72
V
nC
nC
©2001 Fairchild Semiconductor Corporation
HGTP5N120BN, HGT1S5N120BNS Rev. A
HGTP5N120BN, HGT1S5N120BNS
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25Ω,
L = 5mH,
Test Circuit (Figure 18)
TEST CONDITIONS
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
Ω
,
L = 5mH,
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
22
15
160
130
220
450
390
20
15
182
175
220
1000
560
-
MAX
25
20
180
160
-
600
450
25
20
280
200
-
1300
800
0.75
UNITS
ns
ns
ns
ns
µ
J
µ
J
µ
J
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
25
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
35
30
25
20
15
10
5
0
V
GE
= 15V
20
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V, L = 5mH
15
10
5
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTP5N120BN, HGT1S5N120BNS Rev. A
HGTP5N120BN, HGT1S5N120BNS
Typical Performance Curves
f
MAX
, OPERATING FREQUENCY (kHz)
200
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
10
10
40
V
CE
= 840V, R
G
= 25Ω, T
J
= 125
o
C
35
I
SC
30
25
20
t
SC
15
10
30
20
60
50
40
70
80
T
J
= 150
o
C, R
G
= 25Ω, L = 5mH, V
CE
= 960V
T
C
= 75
o
C, V
GE
= 15V
T
C
V
GE
IDEAL DIODE
75
o
C 15V
75
o
C 12V
100
50
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION T
C
(DUTY FACTOR = 50%)
110
o
C
110
o
C
R
ØJC
= 0.75
o
C/W, SEE NOTES
2
4
6
V
GE
15V
12V
8
10
10
11
12
13
14
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
DUTY CYCLE <0.5%, V
GE
= 12V
PULSE DURATION = 250µs
25
T
C
= -55
o
C
20
T
C
= 25
o
C
15
10
5
0
T
C
= 150
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
25
T
C
= -55
o
C
20
15
10
5
0
0
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3000
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
E
ON2
, TURN-ON ENERGY LOSS (µJ)
R
G
= 25Ω, L = 5mH, V
CE
= 960V
2500
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
2000
1500
1000
500
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
2
3
4
5
6
7
8
9
10
900
R
G
= 25Ω, L = 5mH, V
CE
= 960V
800
700
600
500
400
T
J
= 25
o
C, V
GE
= 12V OR 15V
300
200
T
J
= 150
o
C, V
GE
= 12V OR 15V
2
3
4
5
6
7
8
9
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP5N120BN, HGT1S5N120BNS Rev. A
HGTP5N120BN, HGT1S5N120BNS
Typical Performance Curves
40
R
G
= 25Ω, L = 5mH, V
CE
= 960V
t
dI
, TURN-ON DELAY TIME (ns)
35
35
t
rI
, RISE TIME (ns)
30
25
20
15
10
0
2
3
4
5
6
7
8
9
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
Unless Otherwise Specified
(Continued)
40
R
G
= 25Ω, L = 5mH, V
CE
= 960V
30
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
25
20
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
15
2
3
4
5
6
7
8
9
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
250
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 25Ω, L = 5mH, V
CE
= 960V
225
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
200
175
150
125
100
200
R
G
= 25Ω, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
150
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
2
3
4
5
6
7
8
9
10
50
2
3
4
T
J
= 25
o
C, V
GE
= 12V OR 15V
5
6
7
8
9
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
80
70
60
50
40
30
20
10
0
7
8
9
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
DUTY CYCLE <0.5%, V
CE
= 20V
PULSE DURATION = 250µs
V
GE
, GATE TO EMITTER VOLTAGE (V)
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 120Ω, T
C
= 25
o
C
V
CE
= 1200V
V
CE
= 400V
V
CE
= 800V
10
20
30
40
50
60
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTICS
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP5N120BN, HGT1S5N120BNS Rev. A
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