IDT7M4042S35C datasheet, PDF - EEWORLD Datasheet

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IDT7M4042S35C: DescriptionSRAM Module, 256KX4, 35ns, CMOS, CDMA28; Categorystorage storage; File Size155KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7M4042S35C Overview

SRAM Module, 256KX4, 35ns, CMOS, CDMA28

IDT7M4042S35C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	35 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-CDMA-T28
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	4
Number of functions	1
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX4
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.4
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.122 A
Minimum standby current	4.5 V
Maximum slew rate	0.32 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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IDT7M4042S35C Related Products

	IDT7M4042S35C	IDT7M4042S55C	IDT7M4042S55CB	IDT7M4042S80CB	IDT7M4042S35CB	IDT7M4042S30C	IDT7M4042S45C	IDT7M4042S45CB	IDT7M4042S65CB
Description	SRAM Module, 256KX4, 35ns, CMOS, CDMA28	SRAM Module, 256KX4, 55ns, CMOS, CDMA28	SRAM Module, 256KX4, 55ns, CMOS, CDMA28	SRAM Module, 256KX4, 80ns, CMOS, CDMA28	SRAM Module, 256KX4, 35ns, CMOS, CDMA28	SRAM Module, 256KX4, 30ns, CMOS, CDMA28	SRAM Module, 256KX4, 45ns, CMOS, CDMA28	SRAM Module, 256KX4, 45ns, CMOS, CDMA28	SRAM Module, 256KX4, 65ns, CMOS, CDMA28
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	EAR99	EAR99	3A001.A.2.C	3A001.A.2.C
Maximum access time	35 ns	55 ns	55 ns	80 ns	35 ns	30 ns	45 ns	45 ns	65 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28	R-CDMA-T28
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	4	4	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28	28	28
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	125 °C	125 °C	125 °C	70 °C	70 °C	125 °C	125 °C
Minimum operating temperature	-	-	-55 °C	-55 °C	-55 °C	-	-	-55 °C	-55 °C
organize	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4	DIP28,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.122 A	0.122 A	0.122 A	0.122 A	0.122 A	0.122 A	0.122 A	0.122 A	0.122 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.32 mA	0.32 mA	0.32 mA	0.32 mA	0.32 mA	0.32 mA	0.32 mA	0.32 mA	0.32 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Filter level	-	-	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	-	-	38535Q/M;38534H;883B	38535Q/M;38534H;883B

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