K5A3340YBB-T755 datasheet, PDF

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K5A3340YBB-T755: DescriptionMemory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69; Categorystorage storage; File Size843KB，43 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K5A3340YBB-T755 Overview

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69

K5A3340YBB-T755 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA69,10X10,32
Contacts	69
Reach Compliance Code	compliant
Maximum access time	70 ns
Other features	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM
JESD-30 code	R-PBGA-B69
length	11 mm
memory density	33554432 bit
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+SRAM
Number of functions	1
Number of terminals	69
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA69,10X10,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
power supply	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.00001 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

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K5A3x40YT(B)B

Document Title

Multi-Chip Package MEMORY

MCP MEMORY

32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

Revision History

Revision No. History

0.0

1.0

Initial Draft

Final Specification

Draft Date

February 22, 2002

June 24, 2002

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

-1-

Revision 1.0

June 2002

K5A3340YBB-T755 Related Products

	K5A3340YBB-T755	K5A3340YTB-T755	K5A3340YBB-T855	K5A3240YBB-T755	K5A3240YTB-T855	K5A3240YBB-T855	K5A3340YTB-T855
Description	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA69,10X10,32	TFBGA, BGA69,10X10,32	TFBGA, BGA69,10X10,32	TFBGA, BGA69,10X10,32	TFBGA, BGA69,10X10,32	TFBGA, BGA69,10X10,32	TFBGA, BGA69,10X10,32
Contacts	69	69	69	69	69	69	69
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli	compli
Maximum access time	70 ns	70 ns	80 ns	70 ns	80 ns	80 ns	80 ns
Other features	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM
JESD-30 code	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69
length	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bi	33554432 bi
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	16	16	16	16	16	16	16
Mixed memory types	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
Number of functions	1	1	1	1	1	1	1
Number of terminals	69	69	69	69	69	69	69
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
power supply	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum standby current	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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