K4X51323PC-7ECA0 datasheet, PDF

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K4X51323PC-7ECA0: DescriptionDDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90; Categorystorage storage; File Size285KB，28 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4X51323PC-7ECA0 Overview

DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90

K4X51323PC-7ECA0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	111 MHz
I/O type	COMMON
interleaved burst length	2,4,8,16
JESD-30 code	R-PBGA-B90
length	13 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	90
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	16MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1 mm
self refresh	YES
Continuous burst length	2,4,8,16
Maximum standby current	0.0003 A
Maximum slew rate	0.135 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

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Preliminary

K4X51323PC - 7(8)E/G

Mobile-DDR SDRAM

16M x32

Mobile-DDR SDRAM

Revision 0.6

October 2005

K4X51323PC-7ECA0 Related Products

	K4X51323PC-7ECA0	K4X51323PC-7GCA0	K4X51323PC-8EC30	K4X51323PC-7GC30	K4X51323PC-8GC3T	K4X51323PC-7EC30	K4X51323PC-8GC30	K4X51323PC-8ECA0	K4X51323PC-8GC60	K4X51323PC-8GCA0
Description	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90	DDR DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA, BGA90,9X15,32	VFBGA,	VFBGA, BGA90,9X15,32
Contacts	90	90	90	90	90	90	90	90	90	90
Reach Compliance Code	compliant	compliant	compliant	compliant	unknown	compliant	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
length	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	90	90	90	90	90	90	90	90	90	90
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
organize	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	COMMERCIAL EXTENDED	OTHER	OTHER	OTHER	COMMERCIAL EXTENDED	OTHER
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
Maximum clock frequency (fCLK)	111 MHz	111 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	111 MHz	-	111 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON
interleaved burst length	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	-	2,4,8,16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE
Encapsulate equivalent code	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	-	BGA90,9X15,32
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED	260	NOT SPECIFIED	260	NOT SPECIFIED
power supply	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	1.8 V
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	-	8192
Continuous burst length	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16	-	2,4,8,16
Maximum standby current	0.0003 A	0.0003 A	0.0003 A	0.0003 A	0.0003 A	0.0003 A	0.0003 A	0.0003 A	-	0.0003 A
Maximum slew rate	0.135 mA	0.135 mA	0.15 mA	0.15 mA	0.15 mA	0.15 mA	0.15 mA	0.135 mA	-	0.135 mA
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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