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5082-2231

Description
Mixer Diode, Low Barrier, S Band, Silicon
CategoryDiscrete semiconductor    diode   
File Size1MB,2 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric View All

5082-2231 Overview

Mixer Diode, Low Barrier, S Band, Silicon

5082-2231 Parametric

Parameter NameAttribute value
MakerHewlett Packard Co.
package instructionS-CQMW-F4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationRING, 4 ELEMENTS
Maximum diode capacitance0.6 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandS BAND
JESD-30 codeS-CQMW-F4
Number of components4
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Maximum power dissipation0.3 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationQUAD
Schottky barrier typeLOW BARRIER
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