EEWORLDEEWORLDEEWORLD

Part Number

Search

MG50G2YL1

Description
Power Bipolar Transistor, 50A I(C), 1-Element,
CategoryDiscrete semiconductor    The transistor   
File Size300KB,3 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

MG50G2YL1 Overview

Power Bipolar Transistor, 50A I(C), 1-Element,

MG50G2YL1 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)50 A
Minimum DC current gain (hFE)100
Maximum landing time (tf)2000 ns
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)300 W
Maximum rise time (tr)1000 ns
VCEsat-Max2 V

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2696  1816  2322  264  1634  55  37  47  6  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号