Si2304BDS
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.070 @ V
GS
= 10 V
0.105 @ V
GS
= 4.5 V
I
D
(A)
3.2
2.6
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2304BDS (L4)*
*Marking Code
Ordering Information: Si2304BDS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 sec
30
Steady State
$20
Unit
V
3.2
2.5
10
0.9
1.08
0.69
−55
to 150
2.6
2.1
0.62
0.75
0.48
W
_C
A
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
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t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
90
130
60
Maximum
115
166
75
Unit
_C/W
C/W
1
Si2304BDS
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V(
BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 30 V, V
GS
= 1.0 V, T
J
=25_C
V
DS
w
4.5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
DS
= 4.5 V, I
D
= 2.5 A
I
S
= 1.25 A, V
GS
= 0 V
6
0.055
0.080
6.0
0.8
1.2
0.070
0.105
30
1.5
Symbol
Test Conditions
Min
Typ
Max
Unit
3.0
"100
0.5
10
1
V
nA
mA
A
W
S
V
Drain-Source On-Resistance
Drain Source On Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gt
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
f = 1.0 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 2.5 A
,
,
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
2.6
4.6
0.8
1.15
3.0
225
50
28
pF
W
4
7
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
7.5
12.5
19
15
12
20
30
25
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 5 V
10
Transfer Characteristics
8
I
D
−
Drain Current (A)
8
I
D
−
Drain Current (A)
6
6
4
4V
2
3V
0
2
4
6
8
10
4
T
C
= 125_C
2
25_C
−55_C
0
0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
0
V
DS
−
Drain-to-Source Voltage (V)
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2
Si2304BDS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.24
r
DS(on)
−
On-Resistance (
W
)
0.20
C
−
Capacitance (pF)
0.16
0.12
V
GS
= 4.5 V
0.08
0.04
0.00
0
2
4
6
8
10
V
GS
= 10 V
350
300
250
200
150
100
C
oss
50
0
0
5
10
15
20
25
30
C
rss
C
iss
Vishay Siliconix
Capacitance
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 2.5 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
1.4
6
r
DS(on)
−
On-Resistance (
W)
(Normalized)
2
3
4
5
1.2
4
1.0
2
0.8
0
0
1
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
T
J
= 150_C
0.20
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
1
r
DS(on)
−
On-Resistance (
W
)
0.16
I
D
= 2.5 A
0.12
0.1
T
J
= 25_C
0.08
0.01
0.04
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
www.vishay.com
3
Si2304BDS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−0.8
−50
2
Power (W)
6
T
A
= 25_C
Single Pulse
10
Single Pulse Power
8
4
−25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
10
ms
100
ms
10
I
D
−
Drain Current (A)
1
1 ms
10 ms
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
100 ms
dc, 100 s, 10 s, 1 s
0.01
0.1
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
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4
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
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