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L9013RLT1

Description
Small Signal Bipolar Transistor, 0.5A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size161KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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L9013RLT1 Overview

Small Signal Bipolar Transistor, 0.5A I(C), NPN

L9013RLT1 Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES

L9013RLT1 Preview

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
L9013*LT1
3
1
2
1
BASE
SOT-23 (TO-236AB)
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
20
40
5
500
Symbol
P
D
225
o
Unit
V
V
V
mAdc
Max
Unit
mW
mW/
o
C
o
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
=25
o
C
o
Derate above 25 C
o
1.8
R
θ
JA
556
C
/
W
P
D
300
2.4
R
θJA
mW
mW/
o
C
o
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
417
-55 to +150
C
/
W
o
Tj ,Tstg
C
DEVICE MARKING
L9013QLT1=13Q
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
Min
20
5
40
-
-
Typ
-
-
-
Max
-
-
-
150
150
Unit
V
V
V
nA
nA
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
(I
E
=100µA)
Collector-Base Breakdown Voltage
(I
C
=100µA)
Collector Cutoff Current (V
CB
=35V)
Emitter Cutoff Current (V
EB
=4V)
L9013*LT1–1/2
LESHAN RADIO COMPANY, LTD.
L9013*LT1
ON CHARACTERISTICS
DC Current Gain
(I
C
=50mA, V
CE
=1V)
Collector-Emitter Saturation Voltage
(I
C
=500mA,I
B
=50mA)
H
fe
V
CE(S)
100
-
-
-
600
0.6
V
NOTE:
*
H
FE
P
100~200
Q
150~300
R
200~400
S
300~600
SOT-23 (TO-236AB)
A
L
3
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
B S
1
2
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
PIN 1.
BASE
2.
EMITTER
3.
COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
L9013*LT1–2/2

L9013RLT1 Related Products

L9013RLT1 L9013PLT1 L9013SLT1
Description Small Signal Bipolar Transistor, 0.5A I(C), NPN Small Signal Bipolar Transistor, 0.5A I(C), NPN Small Signal Bipolar Transistor, 0.5A I(C), NPN
Maker LRC LRC LRC
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Configuration Single Single Single
Minimum DC current gain (hFE) 100 100 100
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount YES YES YES

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