LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
L9013*LT1
3
1
2
1
BASE
SOT-23 (TO-236AB)
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
20
40
5
500
Symbol
P
D
225
o
Unit
V
V
V
mAdc
Max
Unit
mW
mW/
o
C
o
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
=25
o
C
o
Derate above 25 C
o
1.8
R
θ
JA
556
C
/
W
P
D
300
2.4
R
θJA
mW
mW/
o
C
o
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
417
-55 to +150
C
/
W
o
Tj ,Tstg
C
DEVICE MARKING
L9013QLT1=13Q
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
Min
20
5
40
-
-
Typ
-
-
-
Max
-
-
-
150
150
Unit
V
V
V
nA
nA
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
(I
E
=100µA)
Collector-Base Breakdown Voltage
(I
C
=100µA)
Collector Cutoff Current (V
CB
=35V)
Emitter Cutoff Current (V
EB
=4V)
L9013*LT1–1/2
LESHAN RADIO COMPANY, LTD.
L9013*LT1
ON CHARACTERISTICS
DC Current Gain
(I
C
=50mA, V
CE
=1V)
Collector-Emitter Saturation Voltage
(I
C
=500mA,I
B
=50mA)
H
fe
V
CE(S)
100
-
-
-
600
0.6
V
NOTE:
*
H
FE
P
100~200
Q
150~300
R
200~400
S
300~600
SOT-23 (TO-236AB)
A
L
3
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
B S
1
2
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
PIN 1.
BASE
2.
EMITTER
3.
COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
L9013*LT1–2/2