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S-L9014QLT3G

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size105KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

S-L9014QLT3G Overview

Small Signal Bipolar Transistor,

S-L9014QLT3G Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Complementary to L9014.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
3
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
L9014QLT3G
L9014RLT1G
L9014RLT3G
L9014SLT1G
L9014SLT3G
L9014TLT1G
L9014TLT3G
S-L9014QLT1G
S-L9014QLT3G
S-L9014RLT1G
S-L9014RLT3G
S-L9014SLT1G
S-L9014SLT3G
S-L9014TLT1G
S-L9014TLT3G
Marking
14Q
14Q
14R
14R
14S
14S
14T
14T
Shipping
3000/Tape&Reel
1
10000/Tape&Reel
3000/Tape&Reel
2
SOT– 23
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5
100
Unit
V
V
V
mA
2
EMITTER
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25
o
C
Derate above 25
o
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
o
o
Symbol
P
D
Max
Unit
225
1.8
R
JA
mW
mW/
o
C
o
556
C
/
W
P
D
300
2.4
R
JA
mW
mW/
o
C
o
417
-55 to +150
C
/
W
C
T ,T
stg
J
o
Rev.O 1/4

S-L9014QLT3G Related Products

S-L9014QLT3G L9014QLT1G S-L9014RLT1G S-L9014SLT3G S-L9014TLT3G S-L9014TLT1G S-L9014QLT1G S-L9014SLT1G
Description Small Signal Bipolar Transistor, Rated power: 225mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN NPN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Maker LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
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