LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Complementary to L9014.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
3
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
L9014QLT3G
L9014RLT1G
L9014RLT3G
L9014SLT1G
L9014SLT3G
L9014TLT1G
L9014TLT3G
S-L9014QLT1G
S-L9014QLT3G
S-L9014RLT1G
S-L9014RLT3G
S-L9014SLT1G
S-L9014SLT3G
S-L9014TLT1G
S-L9014TLT3G
Marking
14Q
14Q
14R
14R
14S
14S
14T
14T
Shipping
3000/Tape&Reel
1
10000/Tape&Reel
3000/Tape&Reel
2
SOT– 23
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5
100
Unit
V
V
V
mA
2
EMITTER
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25
o
C
Derate above 25
o
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
o
o
Symbol
P
D
Max
Unit
225
1.8
R
JA
mW
mW/
o
C
o
556
C
/
W
P
D
300
2.4
R
JA
mW
mW/
o
C
o
417
-55 to +150
C
/
W
C
T ,T
stg
J
o
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
(I
E
=100
A)
V(BR)
CBO
50
-
-
V
V(BR)
EBO
5
-
-
V
Symbol
V(BR)
CEO
Min
45
Typ
-
Max
-
Unit
V
Collector-Base Breakdown Voltage
(I
C
=100
A)
Collector Cutoff Current (V
CB
=40V)
Emitter Cutoff Current (V
EB
=3V)
ON CHARACTERISTICS
DC Current Gain
(I
C
=1mA, V
CE
=5V)
Collector-Emitter Saturation Voltage
(I
C
=100mA,I
B
=5mA)
I
CBO
I
EBO
-
-
100
100
nA
nA
H
FE
150
-
1000
V
CE
-
-
0.3
V
NOTE:
*
H
FE
Q
150~300
R
200~400
S
300~600
T
400~1000
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
STATIC CHARACTERISTIC
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 4/4
NXP MCU
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