IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au.
IBM11S4325BP
IBM11S4325BM
4M x 32 SO DIMM Module
Features
• 72-Pin Small Outline Dual-In-Line
Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
t
HPC
EDO Mode Cycle Time
60ns
15ns
30ns
-70
70ns
20ns
35ns
104ns 124ns
25ns
30ns
• High Performance CMOS process
• Manufactured with 16Mb DRAMS (4M x 4)
• Single 3.3V
±
0.3V or 5.0V
±
0.5V Power Supply
• Optimized for use in byte-write non-parity appli-
cations.
• Low active current consumption
• All inputs & outputs are LVTTL(3.3V) or TTL(5V)
compatible
• Extended Data Out (EDO) access cycle
• Refresh Modes: RAS-Only, CBR, Hidden
Refresh and Self Refresh
• 2048 refresh cycles distributed across 128ms
• 11/11 Addressing (Row/Column)
• Au contacts
Description
The IBM11S4325BP/M are 4MB industry standard
72-pin 4-byte small outline dual in-line memory
modules (SO DIMMs). The modules are organized
as 4Mx32 high speed memory arrays that are
intended for use in 16, 32 and 64 bit applications.
They are manufactured with eight 4Mx4 TSOP
devices, each in a 300mil package.
The use of EDO DRAMs allows for a reduction in
Page Mode cycle time from 40ns (Fast Page) to
25ns (EDO, 60ns sort). The use of TSOP packages
allows tight DIMM spacing (.3” on center).
This assembly is intended for use in space con-
strained and/or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
Card Outline
Detail A
See Detail A
for 5.0V version
(Front) 1
(Back) 2
71
72
50H4745
SA14-4458-01
Released 4/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 22
IBM11S4325BP
IBM11S4325BM
4M x 32 SO DIMM Module
Absolute Maximum Ratings
Rating
Symbol
V
CC
V
IN
V
OUT
T
OPR
T
STG
P
D
I
OUT
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
3.3 Volt
-0.5 to + 4.6
5.0 Volt
-1.0 to + 7.0
Units
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1
1
-0.5 to min (V
CC
+ 0.5, 4.6) -0.5 to min (V
CC
+ 0.5, 7.0)
-0.5 to min (V
CC
+ 0.5, 4.6) -0.5 to min (V
CC
+ 0.5, 7.0)
0 to +70
-55 to +150
3.6
50
0 to +70
-55 to +150
5.5
50
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
IH
V
IL
Parameter
Min
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
-0.5
(T
A
= 0 to 70
°
C)
5.0 Volt
Max
3.6
V
CC
+ 0.5
0.8
Min
4.5
2.4
-0.5
Typ
5.0
—
—
Max
5.5
V
CC
+ 0.5
0.8
Units
V
V
V
Notes
1
1, 2
1, 2
3.3 Volt
Typ
3.3
—
—
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns with 3.3 Volt, or V
CC
+ 2.0V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V
for
≤
8.0ns) with 5.0 Volt. Additionally, V
IL
may undershoot to -2.0V for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths
measured at 50% points with amplitude measured peak to DC reference.
Capacitance
Symbol
C
I1
C
I2
C
I3
C
I4
C
I/O
(T
A
= 0 to +70°C, V
CC
= 3.3V
±
0.3V or 5.0V
±
0.5V)
Parameter
Max
53
40
23
67
15
Units
pF
pF
pF
pF
pF
Input Capacitance (A0-A10)
Input Capacitance (RAS)
Input Capacitance (CAS)
Input Capacitance (WE)
Output Capacitance (DQ0-DQ34)
50H4745
SA14-4458-01
Released 4/96
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 22
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