IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au.
IBM11S2325HP IBM11S4325HP
IBM11S2325HM IBM11S4325HM
2M/4M x 32 SO DIMM Module
Features
• 72-Pin Small Outline Dual-In-Line
Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
t
HPC
EDO Mode Cycle Time
60ns
15ns
30ns
-6R
60ns
17ns
30ns
-70
70ns
20ns
35ns
•
•
•
•
•
•
•
•
•
•
104ns 104ns 124ns
25ns
25ns
30ns
High Performance CMOS process
Single 3.3
±
0.3V or 5.0
±
0.25V Power Supply
Low active current consumption
All inputs & outputs are LVTTL(3.3V) or TTL(5V)
compatible
Extended Data Out (EDO) access cycle
Refresh Modes: RAS-Only, CBR, Hidden and
Self Refresh
2048 refresh cycles distributed across 128ms
11/10 Addressing (Row/Column)
Optimized for use in byte-write non-parity appli-
cations.
Au contacts
Description
The IBM11S4325HP/M are 16MB industry standard
72-pin 4-byte small outline dual in-line memory mod-
ules (SO DIMMs). The modules are organized as
4Mx32 high speed memory arrays that are intended
for use in 16, 32 and 64 bit applications. They are
manufactured with eight 2Mx8 TSOP devices, each
in a 400mil package. The IBM11S1325HP/M are
8MB half populated versions, manufactured with
four 2Mx8 TSOP devices.
The use of EDO DRAMs allows for a reduction in
cycle time from 40ns (Fast Page) to 25ns (EDO,
60/6Rns sort). The use of TSOP packages allows
for tight DIMM spacing (.3” on center). Input loading
is consistent with 4Mb-based assemblies due to the
addition of discrete capacitors maximizing compati-
bility at the system level.
These assemblies are intended for use in space
constrained and/or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
Card Outline
Detail A
See Detail A
for 5.0V version
(Front) 1
(Back) 2
71
72
75H1718
SA14-4471-00
Revised 4/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 21
IBM11S4325HP IBM11S2325HP
IBM11S4325HM IBM11S2325HM
2M/4M x 32 SO DIMM Module
Pin Description
RAS0, RAS2
Row Address Strobe (8MB)
RAS0 - RAS3 Row Address Strobe (16MB)
CAS0 - CAS3 Column Address Strobe
WE
A0 - A10
DQ0-7, 9-16,
18-25, 27-34
V
CC
V
SS
NC
PD1 - PD7
Read/write Input
Address Inputs
Data Input/output
Power (+3.3V or +5.0V)
Ground
No Connect
Presence Detects
Pinout
Pin# Name Pin# Name Pin# Name
1
2
3
4
5
6
7
8
9
10
11
12
V
SS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
CC
PD1
A0
13
14
15
16
17
18
19
20
21
22
23
24
A1
A2
A3
A4
A5
A6
A10
NC
DQ9
DQ10
DQ11
DQ12
25
26
27
28
29
30
31
32
33
34
35
36
DQ13
DQ14
DQ15
A7
NC
V
CC
A8
A9
RAS3
*
RAS2
DQ16
NC
Pin# Name
37
38
39
40
41
42
43
44
45
46
47
48
DQ18
DQ19
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1*
NC
WE
NC
Pin#
49
50
51
52
53
54
55
56
57
58
59
60
Nam
e
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
NC
DQ27
DQ28
DQ29
DQ31
DQ30
Pin#
61
62
63
64
65
66
67
68
69
70
71
72
Nam
e
V
CC
DQ32
DQ33
DQ34
NC
PD2
PD3
PD4
PD5
PD6
PD7
V
SS
1. * RAS1 and RAS3 are “NC” on 8MB SODIMM.
Ordering Information
Part Number
IBM11S2325HP-60T
IBM11S2325HP-6RT
IBM11S2325HP-70T
IBM11S2325HP-60T
IBM11S2325HM-6RT
IBM11S2325HM-70T
IBM11S4325HP-60T
IBM11S4325HP-6RT
IBM11S4325HP-70T
IBM11S4325HM-60T
IBM11S4325HM-6RT
IBM11S4325HM-70T
1. 6Rns speed sort has t
CAC
of 17ns
Organization
2M x 32
2M x 32
2M x 32
2M x 32
2M x 32
2M x 32
4M x 32
4M x 32
4M x 32
4M x 32
4M x 32
4M x 32
Speed
60ns
6Rns
70ns
60ns
6Rns
70ns
60ns
6Rns
70ns
60ns
6Rns
70ns
Dimensions
2.35” x 1” x .0965”
2.35” x 1” x .0965”
2.35” x 1” x .0965”
2.35” x 1” x .0965”
2.35” x 1” x .0965”
2.35” x 1” x .0965”
2.35” x 1” x .1496”
2.35” x 1” x .1496”
2.35” x 1” x .1496”
2.35” x 1” x .1496”
2.35” x 1” x .1496”
2.35” x 1” x .1496”
Power
3.3V
3.3V
3.3V
5.0V
5.0V
5.0V
3.3V
3.3V
3.3V
5.0V
5.0V
5.0V
1
1
1
1
Notes
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H1718
SA14-4471-00
Revised 4/96
Page 2 of 21
IBM11S2325HP IBM11S4325HP
IBM11S2325HM IBM11S4325HM
2M/4M x 32 SO DIMM Module
Block Diagram
Applies to both 8MB and 16MB SODIMMs
CAS1
DQ0 - DQ7
DQ1-7
DQ9 - DQ16
DQ9-16
WE
CAS
RAS
OE
DQ18 - DQ25
DQ18-25
WE
CAS
RAS
OE
DQ27 - DQ34
DQ27-34
WE
CAS
RAS
OE
WE
CAS0
RAS0
WE
CAS
RAS
OE
U1
U2
U3
U4
A0-A10
11
A0-A10
11
A0-A10
11
A0-A10
11
CAS2
RAS2
A0-A10
CAS3
Applies to 16MB SODIMM only
CAS1
DQ0 - DQ7
DQ1-7
DQ9 - DQ16
DQ9-16
WE
CAS
RAS
OE
DQ18 - DQ25
DQ18-25
WE
CAS
RAS
OE
DQ27 - DQ34
DQ27-34
WE
CAS
RAS
OE
WE
CAS0
RAS1
WE
CAS
RAS
OE
U1
U2
U3
U4
A0-A10
11
A0-A10
11
A0-A10
11
A0-A10
11
CAS2
RAS3
A0-A10
CAS3
75H1718
SA14-4471-00
Revised 4/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 3 of 21
IBM11S4325HP IBM11S2325HP
IBM11S4325HM IBM11S2325HM
2M/4M x 32 SO DIMM Module
Truth Table
Function
Standby
Read
Early-Write
Fast Page Mode - Read:
1st Cycle
Subsequent Cycles
Fast Page Mode - Write:
1st Cycle
Subsequent Cycles
RAS-Only Refresh
CAS-Before-RAS Refresh
Read
Hidden Refresh
Write
Self Refresh
L→H→L
H→L
L
L
H
H
Row
X
Col
X
Data In
High Impedance
RAS
H
L
L
L
L
L
L
L
H→L
L→H→L
CAS
X
L
L
H→L
H→L
H→L
H→L
H
L
L
WE
X
H
L
H
H
L
L
X
H
H
Row
Address
X
Row
Row
Row
N/A
Row
N/A
Row
X
Row
Column
Address
X
Col
Col
Col
Col
Col
Col
N/A
X
Col
All DQ bits
High Impedance
Valid Data Out
Valid Data In
Valid Data Out
Valid Data Out
Valid Data In
Valid Data In
High Impedance
High Impedance
Data Out
Presence Detect
2M x 32
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
1.
NC= OPEN
,
V
ss =
GND
-60 / 6R
V
SS
NC
V
SS
NC
NC
NC
V
SS
-70
V
SS
NC
V
SS
NC
V
SS
NC
V
SS
-60 / 6R
V
SS
NC
V
SS
V
SS
NC
NC
V
SS
4M x 32
-70
V
SS
NC
V
SS
V
SS
V
SS
NC
V
SS
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H1718
SA14-4471-00
Revised 4/96
Page 4 of 21
IBM11S2325HP IBM11S4325HP
IBM11S2325HM IBM11S4325HM
2M/4M x 32 SO DIMM Module
Absolute Maximum Ratings
Rating
Symbol
V
CC
V
IN
V
OUT
T
OPR
T
STG
P
D
I
OUT
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
3.3 Volt
-0.5 to + 4.6
5.0 Volt
-1.0 to + 7.0
Units
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1, 2
1
-0.5 to min (V
CC
+ 0.5, 4.6) -0.5 to min (V
CC
+ 0.5, 7.0)
-0.5 to min (V
CC
+ 0.5, 4.6) -0.5 to min (V
CC
+ 0.5, 7.0)
0 to +70
-55 to +150C
1.3 (4MB) 2.6 (8MB)
50
0 to +70
-55 to +150C
2.0 (4MB) 4.0 (8MB)
50
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
2. Maximum power occurs when all banks are active.
Recommended DC Operating Conditions
Symbol
V
CC
V
IH
V
IL
Parameter
Min
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
-0.5
(T
A
= 0 to 70
°
C)
5.0 Volt
Max
3.6
V
CC
+ 0.5
0.8
Min
4.5
2.4
-0.5
Typ
5.0
—
—
Max
5.5
V
CC
+ 0.5
0.8
Units
V
V
V
Notes
1
1, 2
1, 2
3.3 Volt
Typ
3.3
—
—
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns with 3.3 Volt, or V
CC
+ 2.0V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V
for
≤
8.0ns) with 5.0 Volt. Additionally, V
IL
may undershoot to -2.0V for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths
measured at 50% points with amplitude measured peak to DC reference.
Capacitance
Symbol
C
I1
C
I2
C
I2
C
I4
C
I5
C
IO
(T
A
= 0 to +70°C, V
CC
= 3.3± 0.3V or 5.0
±
0.25V)
Parameter
2M x 32
Max
38
24
24
14
40
15
4M x 32
Max
58
24
24
21
68
22
Units
pF
pF
pF
pF
pF
pF
Input Capacitance (A0-A9)
Input Capacitance (4MB: RAS0, 8MB: RAS0, 1)
Input Capacitance (4MB: RAS2, 8MB: RAS2, 3)
Input Capacitance (CAS)
Input Capacitance (WE)
Input - Output Capacitance (DQ0-DQ34)
75H1718
SA14-4471-00
Revised 4/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 21
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