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IBM11S4325HP-6RT

Description
EDO DRAM Module, 4MX32, 60ns, CMOS
Categorystorage    storage   
File Size210KB,22 Pages
ManufacturerIBM
Websitehttp://www.ibm.com
Download Datasheet Parametric View All

IBM11S4325HP-6RT Overview

EDO DRAM Module, 4MX32, 60ns, CMOS

IBM11S4325HP-6RT Parametric

Parameter NameAttribute value
MakerIBM
package instructionDIMM, DIMM72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-XDMA-N72
memory density134217728 bit
Memory IC TypeEDO DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM72
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle2048
Maximum seat height25.4 mm
self refreshYES
Maximum standby current0.0016 A
Maximum slew rate0.36 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au.
IBM11S2325HP IBM11S4325HP
IBM11S2325HM IBM11S4325HM
2M/4M x 32 SO DIMM Module
Features
• 72-Pin Small Outline Dual-In-Line
Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
t
HPC
EDO Mode Cycle Time
60ns
15ns
30ns
-6R
60ns
17ns
30ns
-70
70ns
20ns
35ns
104ns 104ns 124ns
25ns
25ns
30ns
High Performance CMOS process
Single 3.3
±
0.3V or 5.0
±
0.25V Power Supply
Low active current consumption
All inputs & outputs are LVTTL(3.3V) or TTL(5V)
compatible
Extended Data Out (EDO) access cycle
Refresh Modes: RAS-Only, CBR, Hidden and
Self Refresh
2048 refresh cycles distributed across 128ms
11/10 Addressing (Row/Column)
Optimized for use in byte-write non-parity appli-
cations.
Au contacts
Description
The IBM11S4325HP/M are 16MB industry standard
72-pin 4-byte small outline dual in-line memory mod-
ules (SO DIMMs). The modules are organized as
4Mx32 high speed memory arrays that are intended
for use in 16, 32 and 64 bit applications. They are
manufactured with eight 2Mx8 TSOP devices, each
in a 400mil package. The IBM11S1325HP/M are
8MB half populated versions, manufactured with
four 2Mx8 TSOP devices.
The use of EDO DRAMs allows for a reduction in
cycle time from 40ns (Fast Page) to 25ns (EDO,
60/6Rns sort). The use of TSOP packages allows
for tight DIMM spacing (.3” on center). Input loading
is consistent with 4Mb-based assemblies due to the
addition of discrete capacitors maximizing compati-
bility at the system level.
These assemblies are intended for use in space
constrained and/or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
Card Outline
Detail A
See Detail A
for 5.0V version
(Front) 1
(Back) 2
71
72
75H1718
SA14-4471-00
Revised 4/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
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