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D41D8

Description
TRANSISTOR 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size85KB,2 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Stay tuned Parametric

D41D8 Overview

TRANSISTOR 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

D41D8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-based maximum capacity18 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-202
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)6.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max1 V
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