|
BB619-T |
BB619 |
| Description |
DIODE UHF BAND, 37.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2, Variable Capacitance Diode |
DIODE UHF BAND, 37.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2, Variable Capacitance Diode |
| Maker |
NXP |
NXP |
| package instruction |
R-PDSO-G2 |
R-PDSO-G2 |
| Contacts |
2 |
2 |
| Reach Compliance Code |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
| Other features |
CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES |
CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES |
| Minimum breakdown voltage |
30 V |
30 V |
| Configuration |
SINGLE |
SINGLE |
| Diode Capacitance Tolerance |
10.06% |
10.06% |
| Minimum diode capacitance ratio |
12.5 |
12.5 |
| Nominal diode capacitance |
37.25 pF |
37.25 pF |
| Diode component materials |
SILICON |
SILICON |
| Diode type |
VARIABLE CAPACITANCE DIODE |
VARIABLE CAPACITANCE DIODE |
| frequency band |
ULTRA HIGH FREQUENCY |
ULTRA HIGH FREQUENCY |
| JESD-30 code |
R-PDSO-G2 |
R-PDSO-G2 |
| Number of components |
1 |
1 |
| Number of terminals |
2 |
2 |
| Maximum operating temperature |
125 °C |
125 °C |
| Minimum operating temperature |
-55 °C |
-55 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
SMALL OUTLINE |
| Certification status |
Not Qualified |
Not Qualified |
| Maximum reverse current |
0.01 µA |
0.01 µA |
| Reverse test voltage |
30 V |
30 V |
| surface mount |
YES |
YES |
| Terminal form |
GULL WING |
GULL WING |
| Terminal location |
DUAL |
DUAL |